Conformality Investigation of Titanium Dioxide Thin Films on 3-D Micrometer- and Nanometer-scale Features by Pulsed-Pressure Metal-organic CVD

Authors

  • Vilailuck Siriwongrungson,

    1. Department of Mechanical Engineering, University of Canterbury, Private Bag 4800, Christchurch 8041 (New Zealand)
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  • Susan P. Krumdieck,

    Corresponding author
    1. Department of Mechanical Engineering, University of Canterbury, Private Bag 4800, Christchurch 8041 (New Zealand)
    • Department of Mechanical Engineering, University of Canterbury, Private Bag 4800, Christchurch 8041 (New Zealand).
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  • Maan M. Alkaisi

    1. MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, Private Bag 4800, Christchurch 8041 (New Zealand)
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  • The authors appreciate Dr Khairudin Mohammed, Electrical and Computer Engineering Department, University of Canterbury for substrate fabrication, and Dr Nicholas Long and Martin Ryan, Industrial Research Limited, for XRD analysis. VS was funded by a University of Canterbury Doctoral Scholarship and the Advanced Energy and Material Systems Laboratory (AEMS Lab).

Abstract

The influence of the processing parameters on conformality is studied for pulsed-pressure (PP) metal-organic (MO)CVD. A statistical method to measure conformality, and a model for pulse vapor exposure are presented. Titanium dioxide (TiO2) thin films are deposited from a liquid titanium isopropoxide (TTIP, Ti(OPr)4) solution with no carrier gas on silicon and silicon nitride substrates with 3-D micrometer- and nanometer-scale structures. The deposited films are columnar anatase TiO2 with thicknesses between 130 nm and 310 nm, controlled by the number of pulses. The statistical conformality varies from 0.81 to 0.93, decreased slightly with increasing deposition temperature, and is insensitive to pulse exposure.

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