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Effect of SiC-Impurity Layer and Growth Temperature on MgB2 Superconducting Tapes Fabricated by HPCVD

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  • This work was supported by a Mid-career Researcher Program through National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science & Technology (MEST) (No. 2010-0029136) and the Global Partnership Program through the NRF funded by the MEST (M60602000012).

Abstract

The influence of SiC-impurity layer and growth temperature on microstructure and superconducting properties are studied for MgB2 superconducting tapes. A pulsed laser deposition (PLD) system is used for the deposition of amorphous SiC-impurity layers on flexible metallic Cu(001) tapes. The MgB2 superconducting tapes are fabricated by growing MgB2 films on the top of SiC/Cu tapes, over a wide temperature range of 460–600 °C, by using hybrid physical (HP) CVD system. Among all tapes, the MgB2/SiC/Cu tape deposited at a temperature of 540 °C has the highest Tc of ∼37.7 K. Scanning electron microscopy (SEM) images reveal hexagonal-shaped MgB2 grains with good connectivity, and their sizes are found to vary with growth temperature. When compared to MgB2/Cu tapes, the MgB2/SiC/Cu tapes exhibit an opposite trend in the dependence of critical current density (Jc) with deposition temperatures. The improved Jc(H) behavior can be explained on the basis of the enhanced flux pinning force density (Fp) for MgB2/SiC/Cu tapes upon increasing the growth temperature

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