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Initial Stage Growth during Plasma-Enhanced Atomic Layer Deposition of Cobalt

Authors

  • Han-Bo-Ram Lee,

    1. School of Electrical and Electronic Engineering, Yonsei University 262 Seongsanno, Seodaemun-gu, Seoul, 120-749 (Korea)
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  • Yong Jun Park,

    1. Department of Materials Science and Engineering, POSTECH (Pohang University of Science and Technology) San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784 (Korea)
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  • Sunggi Baik,

    1. Department of Materials Science and Engineering, POSTECH (Pohang University of Science and Technology) San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784 (Korea)
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  • Hyungjun Kim

    Corresponding author
    1. School of Electrical and Electronic Engineering, Yonsei University 262 Seongsanno, Seodaemun-gu, Seoul, 120-749 (Korea)
    • School of Electrical and Electronic Engineering, Yonsei University 262 Seongsanno, Seodaemun-gu, Seoul, 120-749 (Korea)
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  • This work was supported by the Technology Innovation Program (Industrial Strategic technology development program, 10035430, Development of reliable fine-pitch metallization technologies) funded by the Ministry of Knowledge Economy (MKE, Korea). XRR analysis was performed at 3C2 XRD beamline of Pohang Light Source.

Abstract

The initial growth of Co thin films during plasma-enhanced atomic layer deposition (PE-ALD) is investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), and synchrotron radiation X-ray reflectivity (SR-XRR). For the PE-ALD of Co, CoCp2 and NH3 plasma were used as precursor and reactant, respectively. From XRR simulation, the growth rate at the initial stage of growth did not linearly increase with growth cycles, showing deviation from ideal ALD growth. The low density of PE-ALD-produced Co film up to 100 cycles is observed from XRR and confirmed by AFM and SEM results. The growth behavior of Co is explained by island growth under substrate-inhibited growth mode.

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