The authors would like to thank Dr. Rainer Bornemann for his help in the context of Raman spectroscopy.
Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD†
Article first published online: 18 FEB 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 19, Issue 1-3, pages 29–37, March 2013
How to Cite
Zhuang, H., Zhang, L., Staedler, T. and Jiang, X. (2013), Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD. Chem. Vap. Deposition, 19: 29–37. doi: 10.1002/cvde.201207011
- Issue published online: 11 MAR 2013
- Article first published online: 18 FEB 2013
- Manuscript Revised: 26 NOV 2012
- Manuscript Received: 26 JUN 2012
- Low temperature;
- Plasma-enhanced (PE)CVD;
Microwave plasma (MW)CVD is used for the first time in the low-temperature, hetero-epitaxial growth of 3C-SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C-SiC film and Si substrate is obtained in the epitaxially grown 3C-SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C-SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large-scale, high-quality, single-crystalline 3C-SiC films.