The authors would like to thank Dr. Rainer Bornemann for his help in the context of Raman spectroscopy.
Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD†
Article first published online: 18 FEB 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 19, Issue 1-3, pages 29–37, March 2013
How to Cite
Zhuang, H., Zhang, L., Staedler, T. and Jiang, X. (2013), Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD. Chem. Vap. Deposition, 19: 29–37. doi: 10.1002/cvde.201207011
- Issue published online: 11 MAR 2013
- Article first published online: 18 FEB 2013
- Manuscript Revised: 26 NOV 2012
- Manuscript Received: 26 JUN 2012
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