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Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD


  • The authors would like to thank Dr. Rainer Bornemann for his help in the context of Raman spectroscopy.


Microwave plasma (MW)CVD is used for the first time in the low-temperature, hetero-epitaxial growth of 3C-SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C-SiC film and Si substrate is obtained in the epitaxially grown 3C-SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C-SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large-scale, high-quality, single-crystalline 3C-SiC films.