MOCVD of C-oriented Bi2Te3 Films on SiO2 Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium
Article first published online: 12 FEB 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 19, Issue 1-3, pages 61–67, March 2013
How to Cite
Kang, S.-W., Jeon, K.-M., Shin, J.-S., Chun, J.-R., Kim, Y.-H., Lee, S. J. and Yun, J.-Y. (2013), MOCVD of C-oriented Bi2Te3 Films on SiO2 Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium. Chem. Vap. Deposition, 19: 61–67. doi: 10.1002/cvde.201207012
- Issue published online: 11 MAR 2013
- Article first published online: 12 FEB 2013
- Manuscript Revised: 12 NOV 2012
- Manuscript Received: 5 JUL 2012
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