Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD

Authors

  • Stephen E. Potts,

    Corresponding author
    1. Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (The Netherlands)
    • Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (The Netherlands)
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  • Harald B. Profijt,

    1. Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (The Netherlands)
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  • Robin Roelofs,

    1. Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (The Netherlands)
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  • Wilhelmus M. M. Kessels

    1. Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (The Netherlands)
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  • This work is supported by NanoNextNL, a micro and nanotechnology programme of the Dutch ministry of economic affairs, agriculture and innovation (EL&I) and 130 partners. Additionally, this work is carried out within the Thin Film Nanomanufacturing (TFN) programme and is supported financially by the Dutch Technology Foundation STW. The authors also thank W. Keuning, C. A. A. van Helvoirt, J. J. L. M. Meulendijks, J. J. A. Zeebregts and M. J. F. van de Sande (all TU/e) for their technical assistance, support and advice.

Abstract

Room-temperature atomic layer deposition (RT-ALD) processes are of interest for applications using temperature-sensitive substrates. Challenges with RT-ALD arise when the precursors are not sufficiently volatile, purge times become impractically long, and precursors or co-reactants are unreactive with the surface species. In several cases, the latter two challenges can be overcome using energy-enhanced ALD. Here, we demonstrate RT-ALD (25°C) processes for Al2O3, TiO2, and SiO2 from trimethylaluminum (Al(CH3)3, TMA), titanium(IV) tetraisopropoxide (Ti(OiPr)4, TTIP), and bis(diethylamino)silane (SiH2(NEt2)2, BDEAS) precursors with an O2 plasma or O3 gas as co-reactants. Saturated RT-ALD growth was obtained for all O2 plasma processes and TMA/O3, whereas the TTIP/O3 and BDEAS/O3 processes gave no growth. Using these and literature results, the criteria for viable RT-ALD processes are discussed.

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