a-SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors**

Authors


  • The present work has been supported by the National Center for Science as part of the research project No. 2012/05/B/ST5/00366.

Abstract

Amorphous, hydrogenated, silicon carbide (a-SiC:H) films are deposited in the remote hydrogen microwave plasma (RP-CVD) process using diethylsilane as a single-source precursor. The effect of substrate temperature (TS) on the kinetics of RP-CVD, chemical composition, structure, surface morphology, and properties (density, refractive index, and extinction coefficient) of the resulting a-SiC:H films is investigated. The TS dependence of film growth rate implies that RP-CVD is an adsorption-controlled process. The increase of TS from 30 °C to 350 °C causes the elimination of organic moieties from the film and the formation of a Si[BOND]C network structure. The relationships between the content of Si[BOND]C bonds, represented by the relative integrated intensity of the Si[BOND]C IR band, and the film properties are determined. The number of Si[BOND]C bonds is found to be a key parameter in the control of the examined film properties. The films deposited at TS = 350 °C appear to be very dense materials exhibiting small surface roughness and high refractive index. The results of the present study are compared with those reported for a-SiC:H films produced by RP-CVD from a triethylsilane precursor.

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