Water Vapor Treatment for Decreasing the Adhesion between Vertically Aligned Carbon Nanotubes and the Growth Substrate

Authors

  • Yagang Yao,

    Corresponding author
    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, (USA)
    • Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science, Suzhou, (People's Republic of China)
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  • Kyoung-Sik Moon,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, (USA)
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  • Andrew McNamara,

    1. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, (USA)
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  • Ching-ping Wong

    Corresponding author
    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, (USA)
    2. Department of Electronic Engineering, Faculty of Engineering, The Chinese University of Hong Kong, ShaTin, (Hong Kong)
    • Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science, Suzhou, (People's Republic of China)
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  • The work was supported in part by DARPA through Contract No.N66001-09-C-2012.

Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science, Suzhou, 215123, (People's Republic of China)

E-mail: ygyao1511@gmail.com

Abstract

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A simple way to decrease the adhesion between vertically aligned carbon nanotubes and the growth substrate is reported. The decreased adhesion helps the transfer of VACNTs grown from the BM CVD system onto specific substrates. Using this method, a CNT-based thermal interface material, which is a Si/CNT/Cu tri-layer structure, is made. A low thermal resistance of ∼10.5 mm2 K W−1 is achieved.

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