Parylene AF-4 via the Trapping of a Phenoxy Leaving Group

Authors

  • Jay J. Senkevich

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    1. Massachusetts Institute of Technology, Institute for Soldier Nanotechnologies, Cambridge, MA, (USA)
    • Massachusetts Institute of Technology, Institute for Soldier Nanotechnologies, Bldg NE-47, 5th Floor, 77 Massachusetts Ave, Cambridge, MA02139(USA)

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Abstract

A unique method of depositing parylene AF-4 via the cleavage and trapping of a phenoxy leaving group is presented. The leaving group is non-corrosive and the synthetic routes can be readily scalable. The method presented only works with parylene AF-4 because its threshold temperature (∼30°C) is lower than the melting point of the phenoxy radical (∼40°C). This method may prove to be a viable route for low-cost deposition of parylene AF-4 and its widespread use as a conformal coating where superior UV and oxidative stability is needed.

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