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Low-Temperature MOCVD of Crystalline Ga2O3 Nanowires using tBu3Ga

Authors

  • Stephan Schulz,

    Corresponding author
    1. University of Duisburg-Essen, Institute of Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CENIDE) Universitätsstr. 5-7, Essen (Germany)
    • University of Duisburg-Essen, Institute of Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CENIDE) Universitätsstr. 5-7, 45117Essen (Germany)

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  • Georg Bendt,

    1. University of Duisburg-Essen, Institute of Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CENIDE) Universitätsstr. 5-7, Essen (Germany)
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  • Wilfried Assenmacher,

    1. Institute of Inorganic Chemistry, University of Bonn Römerstr. 164, Bonn (Germany)
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  • Daniel Sager,

    1. Werkstoffe der Elektrotechnik and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Bismarckstraße 81, BA, Duisburg (Germany)
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  • Gerd Bacher

    1. Werkstoffe der Elektrotechnik and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Bismarckstraße 81, BA, Duisburg (Germany)
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  • S.S. gratefully acknowledges financial support from the University of Duisburg-Essen.

Abstract

Crystalline Ga2O3 nanowires are synthesized via an Au-catalyzed, as well as a self-catalyzed, growth by a low-temperature metal-organic (MO)CVD process using tBu3Ga as a novel Ga source. Morphology, elemental composition, and crystallinity of the resulting nanowires are analyzed by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and selected area electron diffraction (SAED). Photoluminescence (PL) spectra of the Ga2O3 nanowires show efficient defect-luminescence in the visible and UV ranges with blue and green emission peaks at 430 nm and 512 nm, respectively, at room temperature.

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