Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates

Authors


  • This study was supported by a grant from the cooperative R&D Program (B551179-10-01-00) funded by the Korea Research Council Industrial Science and Technology, Republic of Korea.

Abstract

Good quality Al2O3 thin films are deposited on polyethylene naphthalate (PEN) substrates through atomic layer deposition (ALD) at temperatures as low as 35 °C. Trimethylaluminum [TMA, Al(CH3)3] and water are used as precursors in the present study. Growth rates of 1.14 Å per cycle are observed at 35 °C, while the average arithmetic roughness (Ra) of the film is 0.86 nm. X-ray photoelectron spectroscopy (XPS) analysis confirms the high purity of the grown films with no carbon contamination. Good insulating properties are observed for the films and optical transmittance of more than 90% is recorded in the visible region.

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