This work is supported by NanoNextNL, a micro and nanotechnology program of the Dutch Ministry of economic affairs, agriculture and innovation (EL&I) and 130 partners. This research has also been supported financially by IMEC-NL, the Netherlands. The research of one of the authors (W. M. M. Kessels) is supported by the Netherlands Organization for Scientific Research (NWO) and the Technology Foundation STW through the VICI program on “Nanomanufacturing”. Thanks are due to K. de Peuter, K. K. Schakenraad, and K. W. C. A. van der Straten for their experimental work, and to J. J. A. Zeebregts, M. J. F. Van de Sande, and J. J. L. M. Meulendijks for their technical support. Special thanks are due to Prof. H. H. Brongersma and Dr. T. Grehl (IONTOF, Germany) for the LEIS measurements and their assistance in the data analysis.
Plasma-Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma†
Article first published online: 6 AUG 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Special Issue: Atomic-Scale-Engineered Materials (ASEM)
Volume 20, Issue 7-8-9, pages 258–268, September 2014
How to Cite
Erkens, I. J. M., Verheijen, M. A., Knoops, H. C. M., Landaluce, T. F., Roozeboom, F. and Kessels, W. M. M. (2014), Plasma-Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma. Chem. Vap. Deposition, 20: 258–268. doi: 10.1002/cvde.201407109
- Issue published online: 10 SEP 2014
- Article first published online: 6 AUG 2014
- Manuscript Revised: 31 MAR 2014
- Manuscript Received: 29 JAN 2014
Atomic layer deposition (ALD) using (MeCp)PtMe3 and O2 gas or O2 plasma is a well-established technique for the deposition of thin films of Pt, but the potential of ALD to deposit platinum oxide (PtOx) has not yet been systematically explored. This work demonstrates how PtOx can be deposited by plasma-assisted (PA)-ALD in a temperature window from room temperature (RT) to 300 °C by controlling the O2 plasma and (MeCp)PtMe3 exposure. With increasing substrate temperature, the thermal stability of PtOx decreases and the reducing activity of the precursor ligands increases. Therefore, longer O2 plasma exposures and/or lower (MeCp)PtMe3 exposures are required to obtain PtOx at higher temperatures. Furthermore, it is established that, during the nucleation stage, PtOx ALD starts by the formation of islands that grow and coalesce during the initial ∼40 cycles. Closed-layer thin films of PtOx with an O/Pt ratio of 2.5 can be deposited at 100 °C with a minimal thickness of only ∼2 nm. It is also demonstrated that a conformality of ∼90% can be reached for PtOx films in trenches with an aspect ratio of 9 when using optimized O2 plasma and precursor exposure times.