The research leading to these results has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under Grant Agreement ENHANCE-238409. The research has also been supported by Finnish Centre of Excellence in Atomic Layer Deposition.
Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors†
Version of Record online: 24 JUL 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Special Issue: Atomic-Scale-Engineered Materials (ASEM)
Volume 20, Issue 7-8-9, pages 209–216, September 2014
How to Cite
Kaipio, M., Blanquart, T., Banerjee, M., Xu, K., Niinistö, J., Longo, V., Mizohata, K., Devi, A., Ritala, M. and Leskelä, M. (2014), Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors. Chem. Vap. Deposition, 20: 209–216. doi: 10.1002/cvde.201407115
- Issue online: 10 SEP 2014
- Version of Record online: 24 JUL 2014
- Manuscript Revised: 6 JUN 2014
- Manuscript Received: 14 FEB 2014
- Titanium dioxide (TiO2);
- Zirconium dioxide (ZrO2)
In this study the atomic layer deposition (ALD) of TiO2 and ZrO2 using two heteroleptic amido-guanidinate precursors, [Ti(NEtMe)3(guan-NEtMe)] and [Zr(NEtMe)3(guan-NEtMe)], together with water or ozone as oxygen sources, are investigated. All processes exhibit self-limiting growth at a deposition temperature of 275°C. The zirconium precursor especially gives high growth rates (0.8/1.0 Å per cycle with H2O/O3). The films are also relatively smooth, as determined by atomic force microscopy (AFM). The composition of the films is examined using X-ray photoelectron spectroscopy (XPS) and time of flight elastic recoil detection analysis (TOF-ERDA). When using ozone as the oxygen source the films present very high purity. The results are compared and discussed with respect to earlier studies on guanidinate, as well as homoleptic amido precursors.