M. Nanu, L. Reijnen, B. Meester, J. Schoonman and A. Goossens
Atomic layer deposition of CuInS2 is achieved on TiO2, glass, and SnO2:F-coated glass substrates in the pressure range of 2–10 mbar and temperature range of 350–500 °C using CuCl, InCl3, and H2S as precursors. Deposition temperature and pulse length are found to be the decisive parameters influencing film properties. The morphology and film composition are investigated with SEM, XRD, RBS, and Raman spectroscopy. Results indicate that, depending on the process conditions, CuInS2 single phase, Cu-poor (mixture of CuInS2 and CuIn5S8) or Cu-rich (mixture of CuxS and CuInS2) phases are formed.