Silicon Doping of Gallium Nitride Using Ditertiarybutylsilane (pages 187–190)
C.J. Deatcher, C. Liu, M.-G. Cheong, L.M. Smith, S. Rushworth, A. Widdowson and I.M. Watson
Article first published online: 8 SEP 2004 | DOI: 10.1002/cvde.200304171
Ditertiarybutylsilane is demonstrated as an effective silicon n-dopant source for GaN. The air-stable liquid silicon source is shown to offer significant safety advantages over the hydride gases in current use. Transport measurements using the Hall technique, supplemented by high-resolution XRD and AFM (Figure), have been used to confirm that the quality of GaN doped using this precursor is very similar to that currently doped by SiH4. Free carrier concentrations between 8 × 1016 and 7 × 1018 are achieved.