Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

December, 2004

Volume 10, Issue 6

Pages 291–337

    1. Wettablity of Poly(ethylene terephthalate) Substrates Modified by a Two-Step Plasma Process: Ultra Water Repellent Surface Fabrication (pages 295–297)

      K. Teshima, H. Sugimura, Y. Inoue, O. Takai and A. Takano

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200304181

      The fabrication of ultra-water-repellent poly(ethylene terephthalate) substrates has been achieved by a two-step plasma process. First, appropriate nanotextures are prepared on the substrate through an oxygen plasma treatment, and then a hydrophobic layer is coated on the nanotextured surfaces with plasma-enhanced CVD using tetramethylsilane. The resulting modified substrates show ultra-water-repellent characteristics with a water contact angle greater than 150° (Figure).

    2. MOCVD Growth of Transparent Conducting Cd2SnO4 Thin Films (pages 297–300)

      A.W. Metz, M.A. Lane, C.R. Kannewurt, K.R. Poeppelmeier and T.J. Marks

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200304177

      The first preparation of transparent conducting Cd2SnO4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa)2(TMEDA) (Figure), at 365  °C are found to be highly crystalline with a relatively wide range of grain size of 100–300  nm. XRD indicates a cubic spinel Cd2SnO4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide.

    3. Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide Precursor (pages 301–305)

      H.C. Aspinall, J.M. Gaskell, Y.F. Loo, A.C. Jones, P.R. Chalker, R.J. Potter, L.M. Smith and G.W. Critchlow

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200306310

      Thin films of neodymium oxide are deposited by liquid injection MOCVD on Si(100) and GaAs(100) substrates using the new neodymium alkoxide precursor [Nd(mmp)3] and tetraglyme in toluene (mmp= 1-methoxy-2-methyl-2-propanolate). The films are grown over a wide range of substrate temperatures and are found to be of high purity. The deposits exhibit the cubic C-type Nd2O3 phase or were amorphous depending on the deposition temperature. It is noteworthy that NdOx films deposited on both substrates in the absence of oxygen are carbon free, and AES analysis suggests the absence of Nd(OH)3 in the deposit.

    4. Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor (pages 306–310)

      Y.F. Loo, R.J. Potter, A.C. Jones, H.C. Aspinall, J.M. Gaskell, P.R. Chalker, L.M. Smith and G.W. Critchlow

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200406313

      Gadolinium oxide thin films are deposited by liquid injection MOCVD using the volatile precursor [Gd(mmp)3] (mmp= 1-methoxy-2-methyl-2-propanolate). Carbon-free GdOx films are grown over a wide range of substrate temperatures on both Si(100) and GaAs(100) (Figure). XRD analysis indicates that GdOx grown on Si(100) at 450 °C and above is crystalline with C-type structure, while films grown on GaAs(100) at 450 °C show a strong preferred orientation dominated by the (222) reflection.

    5. UHV Surface Chemistry of bis(ethylcyclopentadienyl)ruthenium, (C2H5C5H4)2Ru on an Oxide Substrate (pages 311–317)

      B. Luo, Q. Wang and J.M. White

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200306306

      The interaction between (C2H5C5H4)2Ru precursor and amorphous alumina substrate is probed using ultra high vacuum methods. Results indicate that in the absence of pre-existing ruthenium sites the precursor absorbs and desorbs, but no reaction takes place on the substrate surface up to 950K with or without co-dosed oxygen at pressures up to 10–6 torr. Reactions to form a film do occur under UHV dosing conditions when Ru sites and chemisorbed oxygen are both present. The distribution of chemical states of surface oxygen changes with temperature and influences reaction kinetics and film growth.

    6. MOCVD of KNbO3 Ferroelectric Films and their Characterization (pages 318–324)

      M.V. Romanov, I.E. Korsakov, A.R. Kaul, S.Yu. Stefanovich, I.A. Bolshakov and G. Wahl

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200306302

      Epitaxial KNbO3 is deposited using single source powder flash evaporation MOCVD from potassium tert-butoxide and Nb(O-i-Pr)4(thd) on two substrates, MgO and StTiO3 (Figure). The microstructure of the film is found to be dependent on the substrate the film is deposited on and on deposition temperature. Device quality of the films is verified by high second harmonic generation output. The effect of the oxygen non-stoichiometry of the films on the phase transition temperatures is proven.

    7. Kinetics and Film Properties of Boron Nitride Derived from Trimethoxyborane/Ammonia by Chemical Vapor Deposition (pages 325–330)

      H. Strakov, G. Hackl, N. Popovska and H. Gerhard

      Version of Record online: 15 DEC 2004 | DOI: 10.1002/cvde.200306311

      An investigation into the atmospheric pressure CVD kinetics of BN from trimethyoxyborane and NH3 is made. The reaction order with respect to trimethoxyborane is calculated to be 0.9 and with respect to NH3 it is –0.2. The apparent activation energy in the temperature range 800–900  °C is determined to be 115.5 kJ/mol. The deposited films are characterized by IR, Raman, and XRD and the microstructure of the deposited films is found to be dependent on the type of substrate used. Turbostratic boron nitride (t-BN) is deposited on graphite while hexagonal boron nitride (h-BN) is deposited on alumina.

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