Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide Precursor (pages 301–305)
H.C. Aspinall, J.M. Gaskell, Y.F. Loo, A.C. Jones, P.R. Chalker, R.J. Potter, L.M. Smith and G.W. Critchlow
Article first published online: 15 DEC 2004 | DOI: 10.1002/cvde.200306310
Thin films of neodymium oxide are deposited by liquid injection MOCVD on Si(100) and GaAs(100) substrates using the new neodymium alkoxide precursor [Nd(mmp)3] and tetraglyme in toluene (mmp= 1-methoxy-2-methyl-2-propanolate). The films are grown over a wide range of substrate temperatures and are found to be of high purity. The deposits exhibit the cubic C-type Nd2O3 phase or were amorphous depending on the deposition temperature. It is noteworthy that NdOx films deposited on both substrates in the absence of oxygen are carbon free, and AES analysis suggests the absence of Nd(OH)3 in the deposit.