Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

October, 2005

Volume 11, Issue 10

Pages 395–446

    1. Contents: Chem. Vap. Deposition 10/2005 (pages 395–397)

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200590018

    2. CVD of Thin Titanium Dioxide Films Using Hexanuclear Titanium Oxo Carboxylate Isopropoxides (pages 399–403)

      P. Piszczek, M. Richert, A. Grodzicki, E. Talik and J. Heimann

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200504214

      TiO2 films can deposited at 400–600 °C on Si(111), carbon fiber (see Figure), and activated carbon grain substrates via thermal inducted CVD using [Ti6O6(OiPr)6(OOCR)6] (R = tBu (1), CH2tBu (2)) as precursors. Deposition of layers with a low content of impurities (lower than 2%) can be achieved using Ar/H2O as a carrier gas. The structure and surface morphology of films change with increasing temperature from large grain layers of anatase (TD= 440–460 °C), to close-packed crystals of rutile (TD = 580–600 °C).

    3. Synthesis of Nanostructured Silicon Carbide Films Through Spray Pyrolysis of Ball-Milled Silicon (pages 403–407)

      D. P. Singh, R. R. Yadav and O. N. Srivastava

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200504213

      Freestanding nanocrystalline films of silicon carbide (see Figure) can be synthesized employing a simple route—spray pyrolysis of ball-milled silicon. The silicon–hexane slurry was spray pyrolized in a silica tube at a constant temperature of 1000–1100 °C. XRD and SEM studies show the as synthesized films to be nanocrystalline α-SiC, with average crystallite size 90–125 nm, and a thickness of a few micrometers.

    4. MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn[N(SiMe3)2]2 and Ammonia as Precursors (pages 409–414)

      E. Maile and R. A. Fischer

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200506383

      Thin films of cubic Zn3N2 can be obtained by metal–organic (MO)CVD at substrate temperatures between 275 and 410 °C. Bis[bis(trimethylsilyl)amido]zinc has been used as the source for Zn, and ammonia as the N source. The films are deposited on SiO2/Si(100) and on zinc oxide-coated sapphire (c-plane Al2O3). Polycrystalline films are obtained at a deposition temperature of 350 °C. Typical growth rates were of 600 nm/h. The influence of the temperature and the flow rate of the reactive gas on the film morphology have been studied.

    5. High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors (pages 415–419)

      J. Päiväsaari, J. Niinistö, K. Arstila, K. Kukli, M. Putkonen and L. Niinistö

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200506396

      Er2O3 thin films can be grown by atomic layer deposition (ALD) from (C5H4CH3)3Er and water precursors. An ALD-type growth with a high growth rate of 1.5 Å per cycle was obtained at 250–350 °C (see Figure). The deposited Er2O3 films are smooth and very uniform. In addition, the (CpMe)3Er/H2O process results in low impurity levels of carbon and hydrogen and good dielectric properties for the thin films.

    6. Nanocoating Individual Silica Nanoparticles by Atomic Layer Deposition in a Fluidized Bed Reactor (pages 420–425)

      L. F. Hakim, J. Blackson, S. M. George and A. W. Weimer

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200506392

      Silica nanoparticles (40 nm) can be individually and conformally coated with alumina films using ALD in a fluidized bed reactor. Films are deposited using self-limiting sequential surface reactions of trimethylaluminum and water. XPS indicated complete coverage on the surface as the silica features were completely attenuated. Extremely conformal, highly uniform film deposition with an average growth rate of 0.11 nm/cycle has been confirmed by SEM, EDS and TEM studies. The self-limiting characteristics of ALD allow the primary nanoparticles to be coated as they fluidize as dynamic aggregates.

    7. CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor (pages 426–432)

      D. Barreca, A. Gasparotto, C. Maragno, E. Tondello, E. Bontempi, L. E. Depero and C. Sada

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200506412

      Lanthanum oxyfluoride-based thin films are grown on SiO2 and Si(100) by CVD from the La(III) precursor La-(hfa)3·diglyme, acting as both the lanthanum and fluorine source. Results show the formation of nanostructured LaOF-based coatings (crystallite size < 30 nm), whose phase composition is significantly affected by the deposition temperature. The development of a grain-like morphology (see Figure) is associated to film crystallization and becomes well evident for T ≥ 300 °C.

    8. Growth of GaN Nanorods via Au Catalyst-Assisted CVD (pages 433–436)

      Z. Yu, Z. Yang, S. Wang, Y. Jin, J. G. Liu, M. Gong and X. Sun

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200506420

      The growth of crystalline GaN nanorods has been achieved on Si (111) substrates by means of the evaporation of Ga in an NH3 atmosphere with the assistance of pre-coated, metallic-catalyst gold nanoparticles. Characterizations using XRD, SEM, and TEM have been carried out to study the crystal structure and morphology of the synthesized GaN nanorods. The nanorod growth mechanism is discussed.

    9. Initiated CVD of Poly(methyl methacrylate) Thin Films (pages 437–443)

      K. Chan and K. K. Gleason

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200506381

      Initiated chemical vapor deposition (iCVD) can be used to deposit poly(methyl methacrylate) (PMMA) thin films. Spectral analyses show high structural resemblance between iCVD PMMA and conventional PMMA. This result positions iCVD as a complementary technique to plasma-enhanced CVD when structural conformity is important. The residence time in the iCVD chamber was found to have a significant impact on the structure of the polymer.

    10. Author Index and Subject Index Chem. Vap. Deposition 10/2005 (page 446)

      Article first published online: 17 OCT 2005 | DOI: 10.1002/cvde.200590019