Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

April, 2005

Volume 11, Issue 4

Pages 183–226

    1. Platinum Nanoelectrodes Embedded in an Insulating Alumina Matrix: An Innovative Approach (pages 187–190)

      G. A. Battiston, S. Daniele, P. Dluzewski, A. Gambirasi, R. Gerbasi, A. Rodriguez and A. Szczepanska

      Version of Record online: 25 APR 2005 | DOI: 10.1002/cvde.200404196

      A novel strategy, based on MOCVD, has been employed for preparation of ensembles of platinum nanoelectrodes. Pt/Al2O3 films with different Pt loading were deposited in just one step on glass capillaries. Nanocomposite films with varying Pt/Al atomic ratios were investigated by both cyclic voltammetry and TEM. Ensembles of nanoelectrodes with either overlap or no overlap of the diffusion layers of each nanoelectrode are obtained, depending on the Pt loading. From TEM measurements average Pt particle size of 3 – 7 nm was determined (Figure).

    2. Adhesion of Sputter-Deposited Ta to Porous-Methyl Silsesquioxane Pore Sealed with Molecular Caulk (pages 191–194)

      D.-L. Bae, C. Jezewski, T. S. Cale and J. J. Senkevich

      Version of Record online: 25 APR 2005 | DOI: 10.1002/cvde.200404198

      The adhesion of sputter-deposited Ta to porous methyl silsesquioxane (MSQ) was investigated with and without molecular caulk technology. Semi-quantitative four-point bending results and Rutherford backscattering spectrometry (RBS) data revealed that the adhesion of the Ta to porous-MSQ is fragile, and adhesion failure occurs at or near the Ta/porous-MSQ interface. The adhesion of Ta to porous-MSQ can be improved by sealing the porous-MSQ surface with a 40 Å thick molecular caulk layer composed of parylene N (PPX). The calculated adhesion energy for Ta/PPX/porous-MSQ structure was about 10.5 J m–2. The molecular caulk layer improves the fracture toughness of the fragile porous-MSQ interphase region due its controllable penetration into the porous material.

    3. CVD with Tri-nbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions (pages 195–205)

      T. Haase, K. Kohse-Höinghaus, N. Bahlawane, P. Djiele, A. Jakob and H. Lang

      Version of Record online: 25 APR 2005 | DOI: 10.1002/cvde.200406339

      Several tri-nbutylphosphine-stabilized silver(I) complexes are characterized regarding their suitability for CVD of silver thin films. The volatility and thermal stability of these complexes are investigated using temperature-programmed and in-situ mass spectrometry, showing that only some silver(I) carboxylates, phenolates, and β-diketonates are promising precursors. Silver(I) carboxylates were selected for further study, and gas phase decomposition mechanisms can be proposed from the mass spectrometric investigations. Smooth and conductive silver films can be deposited in a cold-wall reactor at low pressure; the films were investigated by XRD and REM. The thermal stability information from the mass spectrometric investigations is confirmed by Arrhenius plots for the deposition rate.

    4. Deposition of Silver Thin Films Using the Pyrazolate Complex [Ag(3,5-(CF3)2C3HN2)]3 (pages 206–212)

      Y. Chi, E. Lay, T.-Y. Chou, Y.-H. Song and A. J. Carty

      Version of Record online: 25 APR 2005 | DOI: 10.1002/cvde.200406351

      Four new silver pyrazolate complexes of formula [Ag(tfpz)]3 (1), [Ag-(fbpz)]3 (2), [Ag(dbpz)]3 (3), and [(py)Ag-(tfpz)]2 (4) (Figure) have been synthesized and characterized. The 3,5-bis(trifluoromethyl) pyrazolate substituted complex 1 has considerable potential as a promising CVD source reagent. High-purity silver films were deposited under a H2 atmosphere.

    5. Liquid-Delivery MOCVD of Strontium Bismuth Tantalate Thin Films Using Sr[Ta(OC2H5)5(OCH2CH2OCH3)]2 and Liquid Bi(CH2CH=CH2)3 as Precursors (pages 213–218)

      J.-Y. Hyeon, M. Lisker, M. Silinskas, E. Burte and F. T. Edelmann

      Version of Record online: 25 APR 2005 | DOI: 10.1002/cvde.200406335

      Thin films of BiOX SrXTaYOZ, and strontium bismuth tantalate (SBT) were deposited by metal-organic chemical vapor deposition on 150 mm silicon (100) wafers. Bi(CH2CH=CH2)3 (triallylbismuth) and Sr[Ta(OEt)5(OC2H4OMe)]2 (strontium-bis[tantalum(pentaethoxide)(2-meth-oxyethoxide)]) were used as a new Bi precursor and Sr–Ta precursor, respectively.

    6. Growth Characteristics of Carbon Nanotube Arrays Synthesized by ICP-CVD using Anodic Aluminum Oxide on Silicon as a Nanotemplate (pages 219–225)

      J.-H. Yen, I.-C. Leu, M.-T. Wu, C.-C. Lin and M.-H. Hon

      Version of Record online: 25 APR 2005 | DOI: 10.1002/cvde.200406347

      Carbon nanotube (CNT) arrays with different packing densities were synthesized by inductively coupled plasma chemical vapor deposition using anodic alumina oxide (AAO) on Si as a nanotemplate and nickel nanowire catalysts. There are two major factors affecting the packing density of CNT arrays in this study: First is the diffusion of ion flux in the AAO channel, which can be controlled by AAO length, diameter, and the applied direct current bias. Second is the catalytic activity of Ni nanowires, which is demonstrated to be variable by using different plasma pretreatments.