Deposition of HfO2 Films by Liquid Injection MOCVD Using a New Monomeric Alkoxide Precursor, [Hf(dmop)4] (pages 299–305)
Y. F. Loo, R. O'Kane, A. C. Jones, H. C. Aspinall, R. J. Potter, P. R. Chalker, J. F. Bickley, S. Taylor and L. M. Smith
Version of Record online: 14 JUL 2005 | DOI: 10.1002/cvde.200506384
Thin films of HfO2 have important potential applications in microelectronics. This paper describes the growth of these oxides by liquid injection MOCVD using a new class of alkoxide precursor [Hf-(dmop)4]. The Figure shows the crystal structure of [Hf(dmop)4]. Films were deposited over substrate temperatures ranging from 350 °C to 650 °C, and analysis by XRD shows that films are amorphous at deposition temperatures below 400 °C and adopt a monoclinic (α-HfO2) phase with a fiber texture dependent upon growth temperature at substrate temperatures above 450 °C.