Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

September, 2005

Volume 11, Issue 8-9

Pages 343–388

    1. Ultrahydrophobic/Ultrahydrophilic Micropatterning on a Polymeric Substrate (pages 347–349)

      K. Teshima, H. Sugimura, A. Takano, Y. Inoue and O. Takai

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200504208

      A micropattern consisting of ultrahydrophobic/ultrahydrophilic surfaces has been successfully fabricated on PET substrates via a multistep dry process. A surface nanotexture is prepared by oxygen plasma etching, and then a hydrophobic layer forms by plasma-enhanced CVD. The surface is then exposed to vacuum UV irradiation through a honeycomb mask to produce hydroxyl groups, and the pattern is formed on the PET surface (see Figure).

    2. Continuous Synthesis of Y-Junction Carbon Nanotubes by Catalytic CVD (pages 351–354)

      L. F. Su, J. N. Wang, F. Yu and Z. M. Sheng

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200506399

      Cupric acetate dissolved in methanol was applied for the first time for synthesizing Y-junction carbon nanotubes (CNTs) via catalytic chemical vapor deposition of the methanol solution at 1000–1200 °C. Based on the bamboo structure, which was observed for the first time within Y-junction CNTs, it is suggested that growth of such CNTs may be a result of the fluctuation of external conditions and thus the change of the growth direction of CNTs from melted Cu nanoparticles. Since the process is continuous, the present technique can be easily scaled up for large-scale production.

    3. Deposition of Palladium from a Cylcopentadienyl-allyl-palladium Precursor on Si-Based Substrates with Various Pretreatments: The Role of Surface Si–OH and Si-H Species Studied by X-Ray Photoelectron Spectroscopy (pages 355–361)

      Q.-H. Wu, M. Gunia, T. Strunskus, G. Witte, M. Muhler and C. Wöll

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200506390

      The decomposition reactions of a metal–organic precursor for CVD of Pd, (Cp)Pd(allyl), on Si substrates with differently terminated surfaces has been studied using XPS. The data show that mixed hydrogen/hydroxyl terminated Si surfaces exhibit the highest activity, for precursor decomposition, followed by the as-received Si surface. Clean, well-defined SiO2 surfaces prepared in UHV exhibit the lowest activity for the Pd precursor decomposition. Based on the experimental data, a hydrogen-assisted decomposition mechanism for the Pd precursor is proposed.

    4. New Approach to the ALD of Bismuth Silicates; Bi(CH2SiMe3)3 Acting as a Precursor for both Bismuth and Silicon (pages 362–367)

      J. Harjuoja, T. Hatanpää, M. Vehkamäki, S. Väyrynen, M. Putkonen, L. Niinistö, M. Ritala, M. Leskelä and E. Rauhala

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200506378

      A novel single-source precursor, Bi(CH2SiMe3)3 has been synthesized, characterized, and then employed with ozone in the atomic layer deposition of bismuth silicate films. A constant growth rate can be obtained at temperatures ranging between 250 and 350  °C. The bismuth silicate films so synthesized contain only 0.2 and 0.1 at.-% of carbon and hydrogen, respectively. The as-deposited films were amorphous, and post-synthetic annealing in an atmosphere of N2 or O2 at 400–1000 °C was applied.

    5. Mechanism of Ni Film CVD with a Ni(Ktfaa)2 Precursor on a Silicon Substrate (pages 368–374)

      V. V. Bakovets, V. N. Mitkin and N. V. Gelfond

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200506376

      Thin films of Ni deposited on Si substrates by CVD in the temperature region 270–310 °C using a Ni(ktfaa)2 chelate precursor are shown to be clustered. The Ni reduction temperature decreases if OH groups are present on the surface. At temperatures higher than 310 °C the carbon-containing by-products are incorporated into deposited Ni films. The chemical activation of Si substrate by Ni atom introduction prior to deposition leads to the uniform film formation with good adhesion to the Si substrate.

    6. A Comparative Study of Cr2O3 Thin Films Obtained by MOCVD using Three Different Precursors (pages 375–380)

      G. Carta, M. Natali, G. Rossetto, P. Zanella, G. Salmaso, S. Restello, V. Rigato, S. Kaciulis and A. Mezzi

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200406360

      Cr2O3 thin films can grown by MOCVD on stainless steel, soda-lime glass, and (001) silicon substrates using three different organochromium compounds, allowing comparison between their structural, morphological, and chemical compositions. The films were analyzed by XRD, AFM, Rutherford backscattering, nuclear reaction analysis, elastic recoil detection, XPS, and FTIR spectroscopy. All films were crystalline with hexagonal Cr2O3 eskalonite structure. The films grown from Cr(CO)6, which possess the highest growth rate, were carefully analyzed by nanoindentation mesurements.

    7. Fabrication of TlBa2CaCu2O7c-Axis Oriented Films Through a Hybrid In-Situ MOCVD Process (pages 381–387)

      G. Malandrino, L. M. S. Perdicaro, G. G. Condorelli, A. Cassinese, A. Prigiobbo and I. L. Fragalà

      Version of Record online: 12 SEP 2005 | DOI: 10.1002/cvde.200406363

      A MOCVD in-situ hybrid approach has been used for the fabrication of good quality superconducting TlBa2CaCu2O7 films. The structural and compositional characterization have shown the epitaxial nature of the Tl-1212 films, a good homogeneity, and the absence of any F or C contamination.