Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

January, 2006

Volume 12, Issue 1

Pages 3–69

    1. Editorial: The CVD Team (pages 7–8)

      M. L. Hitchman

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200690004

    2. Film Uniformity in Atomic Layer Deposition (pages 13–24)

      K.-E. Elers, T. Blomberg, M. Peussa, B. Aitchison, S. Haukka and S. Marcus

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200500024

      The film uniformity of atomic layer deposition (ALD) processes has been investigated by reviewing reactors, precursors, and the by-products of surface reactions. The most common causes of non-uniformity are overlapping pulses, thermal self-decomposition of precursors, and non-uniform gas distribution. The paper compiles an overview of the film uniformity challenges the industry is facing today in the development of ALD/PEALD processes. It explains some aspects of how the film uniformity can be affected by the choice of the hardware design and precursors.

    3. Characterization and Properties of Ge1–x–Cx:H Compounds Obtained by X-ray CVD of Germane/Ethyne Systems: Effect of the Irradiation Dose (pages 25–32)

      P. Benzi, E. Bottizzo and C. Demaria

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200506411

      Hydrogenated germanium-carbon alloys have been obtained from X-ray radiolysis of GeH4/C2H2 systems. Their morphology, bonding, structure, and optical properties have been investigated as a function of the irradiation time. The solids are formed by a randomly bound network of carbon and germanium atoms with hydrogen atoms terminating all the dangling bonds (see Figure).

    4. Synthesis and Mechanical Properties of Cubic Boron Nitride /Nanodiamond Composite Films (pages 33–38)

      Y.-M. Chong, K.-L. Ma, K.-M. Leung, C.-Y. Chan, Q. Ye, I. Bello, W. Zhang and S.-T. Lee

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200506422

      Large-area cubic boron nitride/nanodiamond (cBN/ND) composite films have been deposited on silicon substrates using plasma-assisted chemical vapor deposition processes, and their mechanical properties have been studied systematically. The adhesion and mechanical properties of the composite films are shown to be strengthened by the layered structure. The cBN/ND composite layer is characterized by surface smoothness, high mechanical strength, high chemical resistance, and outstanding thermal properties, beneficial for fine tool applications, and in the construction of surface acoustic wave (SAW) devices.

    5. Synthesis and Characterization of Ni and Ni/CrN Nanocomposite Coatings by Plasma Assisted Metal-Organic CVD (pages 39–45)

      P. A. Premkumar, A. Dasgupta, P. Kuppusami, P. Parameswaran, C. Mallika, K. S. Nagaraja and V. S. Raghunathan

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200506415

      Procedures for producing Ni films and composite coatings of Ni/CrN deposited using plasma assisted MOCVD using Ni[(acac)2en] and Cr(acac)3 as precursors are reported. The substrate temperature was optimized to give pore free films for Ni. XRD studies reveal a biphasic (CrN/Ni) structure for the composite coatings containing nanometer-sized particles. The hardness of Ni/CrN composites could be controlled by addition of soft Ni phase to the relatively harder CrN phase. Analytical TEM studies were used to identify the morphological distinctions between the Ni and CrN nanocrystallites in the composite coatings.

    6. MOCVD of Lanthanum Oxides from La(tmhd)3 and La(tmod)3 Precursors: A Thermal and Kinetic Investigation (pages 46–53)

      C. Bedoya, G. G. Condorelli, S. T. Finocchiaro, A. Di Mauro, D. Atanasio, I. L. Fragalà, L. Cattaneo and S. Carella

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200506391

      MOCVD processes using two β-diketonate precursors (La(tmhd)3 and La(tmod)3) have been investigated. In-situ FTIR measurements and thermal analyses have provided information on their thermal robustness and mass-transport properties during MOCVD experiments. Lanthanum oxides have been efficiently deposited using a DLI equipped MOCVD reactor in the 350–500 °C temperature range for both precursors. Finally, the effect of addition of tetraglyme to the precursor solution has been evaluated.

    7. Atmospheric Pressure CVD of TiSe2 Thin Films on Glass (pages 54–58)

      N. D. Boscher, C. J. Carmalt and I. P. Parkin

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200506423

      Atmospheric pressure chemical vapor deposition (APCVD) of TiSe2 films (see Figure) on glass substrates was achieved by reaction of di-tert-butylselenide and diethyl diselenide with TiCl4 at 250–600 °C. The films were either navy blue or bronze in color depending on conditions.

    8. Effect of Substrate Temperature on the Plasma Polymerization of Poly(methyl methacrylate) (pages 59–66)

      T. B. Casserly and K. K. Gleason

      Version of Record online: 19 JAN 2006 | DOI: 10.1002/cvde.200506409

      The effect of substrate temperature on the structure and thermal properties of plasma polymerized poly(methyl methacrylate) PMMA is studied. It is found that the thermal properties of PECVD-produced films from MMA can be tailored by varying the substrate temperature. This suggests that PMMA thin films may be suitable candidates to act as sacrificial material for closed cavity air gap formation. The resulting materials have applications in photonics and in semiconductor devices as an ultra low-k dielectric material.