Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

December, 2006

Volume 12, Issue 12

Pages 705–766

  1. Contents

    1. Top of page
    2. Contents
    3. Correction
    4. Communications
    5. Full Papers
    6. Index
    7. Annual Index
  2. Correction

    1. Top of page
    2. Contents
    3. Correction
    4. Communications
    5. Full Papers
    6. Index
    7. Annual Index
    1. You have free access to this content
      Aerosol-Assisted CVD of Antimony Sulfide from Antimony Dithiocarbamates (page 706)

      J. Rodriguez-Castro, M. F. Mahon and K. C. Molloy

      Version of Record online: 19 DEC 2006 | DOI: 10.1002/cvde.200690026

      This article corrects:

      Aerosol-Assisted CVD of Antimony Sulfide from Antimony Dithiocarbamates1

      Vol. 12, Issue 10, 601–607, Version of Record online: 16 OCT 2006

  3. Communications

    1. Top of page
    2. Contents
    3. Correction
    4. Communications
    5. Full Papers
    6. Index
    7. Annual Index
    1. Effects of Synthesis Conditions on Self-Organized Growth of Aligned Arrays of Silicon Nanowires (pages 709–711)

      J.-J. Niu and J.-N. Wang

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200604229

      The effects of CVD synthesis conditions, including nanochannel alumina (NCA) properties, catalyst distribution, and growth parameters on aligned arrays of silicon nanowires (SiNWs) are investigated. Array-ordered SiNWs are achieved by optimizing the above factors according to the vapor–liquid–solid (VLS) and nanochannel physical limitation mechanism. The study of arrays of SiNWs will permit better understanding of the growth mechanism and develop potential applications in nanoelectronics technology.

    2. CVD of CrO2: Towards a Lower Temperature Deposition Process (pages 712–714)

      P. M. Sousa, S. A. Dias, A. J. Silvestre, O. Conde, B. Morris, K. A. Yates, W. R. Branford and L. F. Cohen

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200604233

      The deposition of highly oriented a-axis CrO2 films onto Al2O3(0001) by atmospheric pressure (AP)CVD at temperatures as low as 330 °C is reported. Deposition rates strongly depend on the substrate temperature, whereas for film surface microstructures the dependence is mainly on film thickness. For the experimental conditions used in this work, CrO2 growth kinetics are dominated by a surface reaction mechanism with an apparent activation energy of (121.0 ± 4.3) kJ mol–1. The magnitude and temperature dependence of the saturation magnetization, up to room temperature, is consistent with bulk measurements.

    3. The Fabrication of Diamond Microshells (pages 714–717)

      P. John, J.-K. Lee, M. Anderson, F. Gray and J. Wilson

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200604240

      Miniature hollow diamond shells can be synthesized by conformal diamond coverage using CVD and subsequent etching of the spherical silica matrices. The directional character of DC plasma growth, and the temperature gradient in silica spheres in contact with a cooled substrate, has been exploited to produce shells with a single micrometer-sized aperture. These preliminary results anticipate the use of diamond nanoshells for the controlled release of drugs and novel applications spanning biosensors and medicine.

  4. Full Papers

    1. Top of page
    2. Contents
    3. Correction
    4. Communications
    5. Full Papers
    6. Index
    7. Annual Index
    1. Plasma Deposition of Thiophene Derivatives Under Atmospheric Pressure (pages 719–727)

      R. Dams, D. Vangeneugden and D. Vanderzande

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200606483

      Plasma deposition of conjugated polymer films under atmospheric pressure is described. Three thiophene derivatives are used as monomers. The plasma depositions with the various precursors are compared using analytical techniques such as X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, UV-vis spectroscopy, and resistance measurements. Good results are obtained with pulsed plasma depositions of poly(3,4-ethylenedioxythiophene). Conductivities of up to 1 × 10–2 S cm–1 are measured.

    2. Plasma Characterization of Oxygen-Tetramethylsilane Mixtures for the Plasma-Enhanced CVD of SiOxCyHz Thin Films (pages 728–735)

      Á. Yanguas-Gil, Á. Barranco, J. Cotrino, P. Gröning and A. R. González-Elipe

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200606496

      Si(OH)x(CH3)3-x species have been identified by mass spectrometry as important reaction intermediates during the PECVD of SiOxCyHz thin films from mixtures of tetramethylsilane and oxygen. A detailed description of the activation mechanism of the precursor as a function of the oxygen content is provided, and is related to the different compositions obtained for the films.

    3. Effects of Processing Parameters in the MOCVD Growth of Nanostructured Lanthanum Trifluoride and Oxyfluoride Thin Films (pages 736–741)

      G. Malandrino, L. M. S. Perdicaro and I. L. Fragalà

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200606504

      The structural and morphological characteristics of nanostructured LaF3 and LaOF films deposited by metal–organic (MO)CVD from the single-source precursor La(hfa)3diglyme have been correlated to the deposition conditions.

    4. Ferroelectric Poly(vinylidene fluoride) Thin Films Grown by Low-Pressure Chemical Vapor Polymerization (pages 742–750)

      A. C. Rastogi and S. B. Desu

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200606505

      Ferroelectric poly(vinylidene fluoride) polymer (VDF2)n thin film formation by a low-pressure chemical vapor polymerization (CVP) process is described. The process involves polymerization of an isotropic vinylidene fluoride monomer condensate layer by cleavage of C double bonds using :CF2 initiators derived from hot-filament, thermochemical decomposition of the hexafluoropropylene oxide C3F6O. Two different growth modes on the film surface and in the bulk are identified by Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS) studies.

    5. The Properties of Si1–xGex Nanodot Arrays Prepared by Plasma-Enhanced CVD on Porous Alumina Templates (pages 751–754)

      H. Hu and D. He

      Version of Record online: 12 DEC 2006 | DOI: 10.1002/cvde.200506528

      Si1–xGex films with nanodot arrays are prepared on anodic aluminum oxide templates by plasma-enhanced CVD. The structure and morphology of the films are investigated and it is found that the size of the Si1–xGex grains is controlled by the pore diameter of the alumina substrate. Intense visible photoluminescence is observed from the samples, and a red-shift of the luminescence peak position is shown with increase in the content of Ge. Conductivity measurements show that electron tunneling is enhanced with increase of the strains stored in the sample.

  5. Index

    1. Top of page
    2. Contents
    3. Correction
    4. Communications
    5. Full Papers
    6. Index
    7. Annual Index
  6. Annual Index

    1. Top of page
    2. Contents
    3. Correction
    4. Communications
    5. Full Papers
    6. Index
    7. Annual Index

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