MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors (pages 172–180)
U. Patil, R. Thomas, A. Milanov, R. Bhakta, P. Ehrhart, R. Waser, R. Becker, H.-W. Becker, M. Winter, K. Merz, R. A. Fischer and A. Devi
Version of Record online: 22 MAR 2006 | DOI: 10.1002/cvde.200506394
Monomeric, low-melting-point, volatile mixed tert-butoxide/β-ketoester complexes of Zr and Hf have been synthesized and characterized. The application of these precursors for low-temperature deposition of ZrO2 and HfO2 thin films by MOCVD has been demonstrated. [Zr(OBut)2(tbaoac)2], which was additionally tested in a liquid-injection MOCVD production tool, resulted in high-quality ZrO2 films displaying good electrical properties that show promise for technological applications.