Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition (pages 567–573)
C. Adelmann, P. Lehnen, S. Van Elshocht, C. Zhao, B. Brijs, A. Franquet, T. Conard, M. Roeckerath, J. Schubert, O. Boissière, C. Lohe and S. De Gendt
Article first published online: 11 OCT 2007 | DOI: 10.1002/cvde.200706604
Thin dysprosium-, scandium-, and hafnium-based oxide dielectric films are deposited by atomic vapor deposition using Dy(EDMDD)3, Sc(EDMDD)3, and Hf(OtBu)2(mmp)2. Spectroscopic ellipsometry, Rutherford backscattering spectrometry, and X-ray photoemission spectroscopy demonstrate good control of the thickness and composition of the films. In particular, ternary and quaternary oxide alloys of any desired composition can be grown. The crystal structure of the compounds is discussed.