Chemical Vapor Deposition

Cover image for Vol. 13 Issue 11

Special Issue: Dedicated to the Memory of Giovanni Battiston

November, 2007

Volume 13, Issue 11

Pages 587–663

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Editorial
    5. Full Papers
    6. Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Editorial
    5. Full Papers
    6. Index
  3. Editorial

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Editorial
    5. Full Papers
    6. Index
    1. Editorial (pages 591–593)

      R. Gerbasi and A. Figueras 

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200790033

      In this editorial, two of Giovanni Battiston's colleagues remember him and give a brief overview of the papers published in this Special Issue dedicated to his memory.

  4. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Editorial
    5. Full Papers
    6. Index
    1. Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films (pages 595–600)

      A. M. Wrobel and I. Blaszczyk-Lezak

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706586

      Silicon carbonitride films were produced by hydrogen remote microwave plasma CVD (RPCVD) from a 1,1,3,3-tetramethyldisilazane using various substrate temperatures in the range TS = 35–400 °C. RPCVD was characterized by the TS dependencies of growth rate and growth yield of the film. The Auger electron and Fourier transform infrared spectroscopic examinations revealed that the increase of TS involves the elimination of organic groups from the film and the formation of silicon carbonitride network structure.

    2. Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films From a Tetramethyldisilazane Source. Part 2: Compositional and Structural Dependencies of Film Properties (pages 601–608)

      A. M. Wrobel and I. Blaszczyk-Lezak

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706587

      The silicon carbonitride (Si:C:N) films produced by the remote hydrogen plasma chemical vapor deposition from a 1,1,3,3-tetramethyldisilazane precursor at various substrate temperatures (35–400 °C) were examined in terms of their density, refractive index, hardness, elastic modulus, and friction coefficient. The relationships between compositional and structural parameters of the films and their properties were determined. The surface mechanical properties of carbon steel and stainless steel coated with Si:C:N films have been investigated.

    3. Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors (pages 609–617)

      R. O'Kane, J. Gaskell, A. C. Jones, P. R. Chalker, K. Black, M. Werner, P. Taechakumput, S. Taylor, P. N. Heys and R. Odedra

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706589

      Hafnium dioxide (HfO2) has been extensively investigated as an alternative to SiO2 as the gate insulating layer in MOSFETS used in CMOS technology, and as a capacitor layer in next-generation DRAMs. In this paper we report the deposition of HfO2 thin films by liquid injection MOCVD and ALD using the neworganometallic precursors [(MeCp)2HfMe(OiPr)] and [(MeCp)2HfMe(mmp)]. The diagram shows the C–V data for a HfO2 film in a [Al/HfO2/SiO2/n-Si] MOS capacitor test structure grown by liquid injection ALD using [(MeCp)2HfMe(mmp)].

    4. Temperature-Controlled Synthesis and Photocatalytic Performance of ZnO Nanoplatelets (pages 618–625)

      D. Barreca, A. P. Ferrucci, A. Gasparotto, C. Maccato, C. Maragno and E. Tondello

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706594

      Zinc oxide nanoplatelets have been successfully grown on Si(100) by CVD starting from a second-generation ZnII precursor, Zn(hfa)2·TMEDA, under a nitrogen + wet oxygen atmosphere, at temperatures between 250 and 500 °C. The photocatalytic activity of ZnO nanoplatelets in the decomposition of the azo-dye Orange II was higher than that of a continuous layer with a compact morphology, opening intriguing perspectives for the development of functional nanodevices for environmental remediation.

    5. Growth of Hafnium Dioxide Thin Films by MOCVD Using a New Series of Cyclopentadienyl Hafnium Compounds (pages 626–632)

      G. Carta, N. El Habra, G. Rossetto, G. Torzo, L. Crociani, M. Natali, P. Zanella, G. Cavinato, V. Matterello, V. Rigato, S. Kaciulis and A. Mezzi

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706596

      Hafnium oxide thin films have been grown by MOCVD on Si(001) and fused quartz substrates in the temperature range 400–500 °C using, as precursors, [(C5H5)2Hf{OC(CH3)2CH2N(CH3)2}2] and [(C5H5)2Hf{OCH(CH3)CH2N(CH3)2}2], which do not present oligomerization and result highly stable towards air. The films, characterized by XRD, XPS, RBS and AFM analyses, contain the monoclinic HfO2 phase (baddeleyite), a granular surface morphology with a roughness/thickness ratio that decreases with increasing the deposition rate.

    6. Overview of Coating Growth Mechanisms in MOCVD Processes as Observed in Pt Group Metals (pages 633–637)

      I. K. Igumenov, N. V. Gelfond, N. B. Morozova and H. Nizard

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706602

      In the present work, the results of our investigations on the structure of Pt group metals coatings are summarized. In some condition, the microstructure of deposited metals changed from compact to columnar (Figure) and a mechanism of contamination is proposed as a potential causes for these observed changes in microstructure.

    7. Optimization of the Vaporization of Liquid and Solid CVD Precursors: Experimental and Modeling Approaches (pages 638–643)

      F. Maury, F.-D. Duminica and F. Senocq

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706600

      The vaporization of a liquid (Ti(OiPr)4) and a solid (Fe(C5H5)2) MOCVD precursor has been investigated under atmospheric pressure. The influence of the design and the temperature of the bubbler, the carrier gas flow rate and the initial load of precursor have been simulated. The model can be used to predict the optimal vaporization rate, the initial load of precursor or the maximum deposition time for a given initial load.

    8. Titania-Coated Platinum Thin Films by MOCVD: Electrochemical and Photoelectrochemical Properties (pages 644–650)

      S. Daniele, D. Battistel, R. Gerbasi, F. Benetollo and S. Battiston

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706599

      100 nm Pt films deposited on glass rods from Pt(acac)2 and H2O displayed electrochemical properties almost identical to those of a bulk Pt electrode. They were coated with anatase TiO2 films 15–100 nm thick by using Ti(OiPr)4 as the precursor. The photoelectrochemical performance of the Pt–TiO2 films, investigated in aqueous media by cyclic voltammetry, demonstrated an optimum behaviour for 100 nm–TiO2 coatings.

    9. An MOCVD Route to Barium Borate Thin Films from a Barium Hydro-tri(1-pyrazolyl)borate Single-Source Precursor (pages 651–655)

      G. Malandrino, R. Lo Nigro and I. L. Fragalà

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706611

      The barium(II) hydro-tri(1-pyrazolyl)borate, Ba[BH(pz)3]2 complex has been tested for the first time as a single-source precursor for the MOCVD of barium borate films. The related thermal analysis data have revealed good volatility and high thermal stability with a low residue upon sublimation. Application of the Ba[BH(pz)3]2 complex produced BaB2O4 films on Al2O3(0001) substrates. The XPS depth profiling points to a good compositional homogeneity in the entire film thickness with a correct 1:2:4 stoichiometric ratio.

    10. Copper Films Deposited by Hot-Wire CVD and Direct Liquid Injection of CupraSelect (pages 656–662)

      G. Papadimitropoulos and D. Davazoglou

      Version of Record online: 20 NOV 2007 | DOI: 10.1002/cvde.200706621

      Copper films were deposited on W, TiN, and SiLK® using a hot-wire (HW)CVD reactor by direct liquid injection (DLI) of hexafluoroacetylacetonate CuI trimethylvinylsilane (CupraSelect®). The deposition rates were higher than for thermal CVD depending on filament temperature. HWCVD enabled the deposition of high-quality Cu films on SiLK®. The resistivities of HWCVD Cu films were higher than for those grown thermally mainly due to C and O contamination.

  5. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Editorial
    5. Full Papers
    6. Index

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