Chemical Vapor Deposition

Cover image for Vol. 13 Issue 12

December, 2007

Volume 13, Issue 12

Pages 671–728

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
    6. Annual Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
    6. Annual Index
    1. Contents: Chem. Vap. Deposition 12/2007 (pages 671–673)

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200790036

  3. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
    6. Annual Index
    1. The Effect of Film Thickness on the Suitability of Titanium Oxynitride (TiNxOy, x + y = 1) Films as Heat Mirrors – Formed by the Atmospheric Pressure CVD of TiCl4 and NH3 (pages 675–679)

      G. Hyett, R. Binions and I. P. Parkin

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706638

      Films of titanium oxynitride have been grown for their potential as heat mirror coatings on window glass, measured as a function of the film thickness. The coatings can be deposited from the atmospheric pressure chemical vapor reaction of TiCl4 and ammonia; the heat mirror properties are evaluated using transmission and reflection spectroscopy.

    2. Growth of Epitaxial MgB2 Thick Films with Columnar Structures by Using HPCVD (pages 680–683)

      W. K. Seong, J. Y. Huh, W. N. Kang, J.-W. Kim, Y.-S. Kwon, N.-K. Yang and J.-G. Park

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706636

      By using novel HPCVD technique with a special susceptor and a susceptor cap, epitaxial MgB2 thick films with columnar structures are successfully fabricated at low temperatures (below 600 °C). The susceptor cap significantly enhances the local magnesium vapor pressure around the substrates so that a very high growth rate of 0.17 μm/min could be achieved. For the 1.7-μm-thick film, the Tc was observed to be 40.5 K.

    3. Deposition of Lanthanum Zirconium Oxide High-k Films by Liquid Injection ALD and MOCVD (pages 684–690)

      J. M. Gaskell, A. C. Jones, P. R. Chalker, M. Werner, H. C. Aspinall, S. Taylor, P. Taechakumput and P. N. Heys

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706637

      Thin films of the high-k oxide LaxZr1–xO2–δ have important potential applications as an alternative to the SiO2 gate dielectric in CMOS technology, and as capacitor layers in next-generation DRAMs. This paper describes the deposition of LaxZr1–xO2–δ by liquid injection MOCVD and ALD using the precursors [(iPrCp)3La] and [(MeCp)2ZrMe(OMe)]. Analysis by XRD (see figure) shows that films with La content (x) of 0.09 and 0.22 crystallize into cubic lanthanum stabilised zirconia phase on annealing at 700 °C, whereas films of higher La content remained amorphous.

    4. Plasma-Assisted MOCVD of Titanium Oxide and its Composite Coatings Using Metallo-organic Precursors (pages 691–697)

      S. Arockiasamy, V. S. Raghunathan, P. Antony Premkumar, P. Kuppusami, A. Dasgupta, P. Parameswaran, C. Mallika and K. S. Nagaraja

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706627

      A plasma-assisted MOCVD technique is adapted for the deposition of anatase TiO2 and its composite coatings with Ni using solid metallo-organic precursors. GIXRD of the deposited films over Si substrates confirms the crystalline nature of TiO2 and Ni/TiO2 films. XPS analysis of the as-deposited and sputtered samples reveals the bi-phasic structure of composite films as well as ascertaining their chemical states. The films are analyzed by SEM/EDX for their microstructure and composition.

    5. Iridium Thin Films Deposited by Liquid Delivery MOCVD using Ir(EtCp)(1,5-COD) with Toluene Solvent (pages 698–704)

      Y. Ritterhaus, T. Hur'yeva, M. Lisker and E. P. Burte

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706630

      Pure iridium thin films are prepared using Ir(EtCp)(1,5-COD) with toluene solvent by liquid delivery MOCVD. The deposition was carried out on various substrates at temperatures of 300 – 500 °C. The reaction kinetics, film composition, morphology, mechanical and electrical properties were investigated. Obtained films showed low resistivity of 7 μΩ·cm and preferred crystalline orientation (111) which offers the application for storage capacitor electrodes.

    6. Calculation of the Evolution of Surface Area and Free Volume During the Infiltration of Fiber Felts (pages 705–715)

      A. Pfrang, K. Schladitz, A. Wiegmann and T. Schimmel

      Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706590

      The modeling of the chemical vapor infiltration of fiber felts with pyrolytic carbon does not only require the consideration of the classical deposition parameters as gas pressure, temperature, and residence time but also the knowledge of the evolution of surface area and free volume during the infiltration. This evolution was calculated quantitatively for a broad range of geometrical parameters and compared with experimental data.

  4. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
    6. Annual Index
  5. Annual Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
    6. Annual Index

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