Deposition of Lanthanum Zirconium Oxide High-k Films by Liquid Injection ALD and MOCVD (pages 684–690)
J. M. Gaskell, A. C. Jones, P. R. Chalker, M. Werner, H. C. Aspinall, S. Taylor, P. Taechakumput and P. N. Heys
Article first published online: 7 DEC 2007 | DOI: 10.1002/cvde.200706637
Thin films of the high-k oxide LaxZr1–xO2–δ have important potential applications as an alternative to the SiO2 gate dielectric in CMOS technology, and as capacitor layers in next-generation DRAMs. This paper describes the deposition of LaxZr1–xO2–δ by liquid injection MOCVD and ALD using the precursors [(iPrCp)3La] and [(MeCp)2ZrMe(OMe)]. Analysis by XRD (see figure) shows that films with La content (x) of 0.09 and 0.22 crystallize into cubic lanthanum stabilised zirconia phase on annealing at 700 °C, whereas films of higher La content remained amorphous.