CVD of MgO Thin Films from Bis(methylcyclopentadienyl) Magnesium (pages 185–189)
G. Carta, N. El Habra, L. Crociani, G. Rossetto, P. Zanella, A. Zanella, G. Paolucci, D. Barreca and E. Tondello
Version of Record online: 4 APR 2007 | DOI: 10.1002/cvde.200606574
Magnesium oxide thin films are grown by MOCVD in the temperature range 400–550 °C using bis(methylcyclopentadienyl)magnesium as precursor, which yields a high growth rate (up to 50 nm/min at 450 °C). The films, characterized by XRD, XPS and AFM analyses, contain the cubic MgO phase (periclase), with carbon contamination limited to the outermost layers and a granular surface morphology with low roughness values.