Chemical Vapor Deposition

Cover image for Vol. 14 Issue 11‐12

November/December 2008

Volume 14, Issue 11-12

Pages 327–373

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Contents: (Chem. Vap. Deposition 11–12/2008) (pages 327–328)

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200890017

  3. Communication

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Freestanding Ge/SiO2 Core/Shell Nanoparticles Formed via Metastable SiO2 Hollow Nanospheres on a Si Wafer (pages 331–333)

      Kwang-Tae Park, Han-Don Um, Sang-Won Jee, Jin-Young Jung, Yun Chang Park, Jun Mo Yang and Jung-Ho Lee

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200804264

      Communication: Freestanding Ge/SiO2 core/shell nanoparticles were synthesized via metastable SiO2 hollow nanospheres by atmospheric-pressure thermal chemical vapor deposition (APCVD) using SiCl4 and GeCl4 source gases. The Ge-core and SiO2-shell thicknesses could be controlled by adjusting the annealing time and the source gas ratio. These nanoparticles might be useful as labeling markers for fluorescent applications.

  4. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimido-tris(diethylamido)-tantalum (TBTDET), and its Effect on Material Properties (pages 334–338)

      Moon-Kyun Song and Shi-Woo Rhee

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200806702

      Full Paper: TaCN films were deposited with the plasma enhanced atomic layer deposition (PEALD) using tert-butylimido-tris(diethylamido)-tantalum and hydrogen for gate metal application. It was confirmed that the film was a homogeneous mixture of TaC, TaN, Ta3N5 and Ta2O5 with oxide phase formed from the post-deposition uptake of oxygen from the air. It was shown that electrical properties of TaCN film were affected by the phase composition in the film. With the increase of TaC and TaN phase over Ta3N5 phase, the resistivity of the film was decreased.

    2. Study of Atmospheric MOCVD of TiO2 Thin Films by Means of Computational Fluid Dynamics Simulations (pages 339–346)

      Neyda Baguer, Erik Neyts, Sake Van Gils and Annemie Bogaerts

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200806708

      Full Paper: A computational study of the metal–organic chemical vapor deposition (MOCVD) of titanium dioxide (TiO2) films grown using titanium tetraisopropoxide (TTIP) as a precursor and nitrogen as a carrier gas at atmospheric pressure was carried out. The effects of the precursor concentration, substrate temperature and the hydrolysis reaction on the deposition process were investigated.

    3. Coating of Highly Porous Fiber Matrices by Atomic Layer Deposition (pages 347–352)

      Marianna Kemell, Mikko Ritala, Markku Leskelä, Roland Groenen and Sven Lindfors

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200800710

      Full Paper: Three different ALD reactors were compared in coating of highly porous, 0.5 mm thick metal fiber matrices with Al2O3 thin films. The Al2O3 coatings were able to protect the fibers against electrochemical corrosion and thermal oxidation. In addition to Al2O3, some matrices were also coated with conformal Ir thin films by ALD.

    4. Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen (pages 353–357)

      Ragnar Kiebach, Zhenrui Yu, Mariano Aceves-Mijares, Jinhui Du, Dongcai Bian, Rosa López-Estopier, Jesús Carrillo-Lopez, Gabriel Juárez-Diaz and Javier Martinez Juarez

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200806711

      Full Paper: Si nanocrystals and nanoislands were prepared by thermal annealing of silicon rich oxide which was deposited using low pressure chemical vapor deposition. The influence of the incorporation of nitrogen on the density, crystallinity and size of the Si nanostructures was investigated (see figure).

    5. The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source (pages 358–365)

      Charles L. Dezelah IV, Jaakko Niinistö, Kaupo Kukli, Frans Munnik, Jun Lu, Mikko Ritala, Markku Leskelä and Lauri Niinistö

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200806716

      Full Paper: The atomic layer deposition of ZrO2 and HfO2 thin films was explored using a variety of substituted hafnocene and zirconocene precursors bearing either alkyl or a combination of alkyl and alkoxy ligands. Film growth behavior was examined for the precursors over the substrate temperature range of 300–500 °C using H2O as the oxygen source. Film composition, morphology, and electrical characteristics were also studied.

    6. Zinc Oxide Thin Films Grown by Aerosol Assisted CVD (pages 366–372)

      Mathew R. Waugh, Geoffrey Hyett and Ivan P. Parkin

      Article first published online: 16 DEC 2008 | DOI: 10.1002/cvde.200806718

      Full Paper: Aerosol Assisted Chemical Vapor Deposition has been used to deposit thin films of zinc oxide over a temperature range of 400 °C–650 °C using zinc acetate in methanol as a precursor solution. The films show high transparency over the visible and infrared region, photocatalytic activity with respect to the degredation of stearic acid and also display photoinduced hydrophilicity under UV irradiation.

  5. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index

SEARCH

SEARCH BY CITATION