Chemical Vapor Deposition

Cover image for Vol. 14 Issue 3‐4

April, 2008

Volume 14, Issue 3-4

Pages 61–92

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
  3. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index
    1. Atomic Layer Deposition of Iron Oxide Thin Films and Nanotubes using Ferrocene and Oxygen as Precursors (pages 67–70)

      Ma˚rten Rooth, Anders Johansson, Kaupo Kukli, Jaan Aarik, Mats Boman and Anders Hårsta

      Version of Record online: 17 APR 2008 | DOI: 10.1002/cvde.200706649

      Thumbnail image of graphical abstract

      Full Paper: Thin films and nanotubes of iron oxide have been deposited using atomic layer deposition (ALD) on Si (100) and anodic aluminium oxide (AAO), respectively. The deposited iron oxide was crystalline. By etching of the AAO membranes after deposition, free-standing nanotubes retaining the order of the AAO template could be fabricated as can be seen in the figure.

    2. Bis(tert-butylimido)-bis(dialkylamido) Complexes of Molybdenum as Atomic Layer Deposition (ALD) Precursors for Molybdenum Nitride: the Effect of the Alkyl Group (pages 71–77)

      Ville Miikkulainen, Mika Suvanto and Tapani A. Pakkanen

      Version of Record online: 17 APR 2008 | DOI: 10.1002/cvde.200706668

      Full Paper: The effect of alkyl group size in the amido moiety of bis(tert-butylimido)-bis(dialkylamido) complexes of molybdenum [(tBuN)2Mo(NR2)2] (R = Me, Et, iPr) on the ALD characteristics was studied experimentally and computationally. It was found that as the alkyl group size increased, the thermal stability decreased. Furthermore, the applicability as ALD precursor decreased as a function of increasing alkyl group size.

    3. Thermodynamic Aspects of Diamond/β-SiC Composite Films (pages 78–84)

      Vadali V. S. S. Srikanth, Vicente Braz Trindade, Thorsten Staedler and Xin Jiang

      Version of Record online: 17 APR 2008 | DOI: 10.1002/cvde.200706673

      Full Paper: A quasi-equilibrium thermodynamic analysis involving H2-CH4-Si(CH3)4 gas mixtures was carried out at the experimental conditions used to deposit nanocrystalline diamond/β-SiC composite films. The co-deposition of diamond and β-SiC phases has been found to be feasible even at Si(CH3)4 concentrations as low as 0.0066% and at temperatures in the range ∼1200 to 1700 K depending on total pressure. Evolution of major gas phase species has also been demonstrated in this study.

    4. Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors (pages 85–91)

      Tero Pilvi, Esa Puukilainen, Kai Arstila, Markku Leskelä and Mikko Ritala

      Version of Record online: 17 APR 2008 | DOI: 10.1002/cvde.200706681

      Full Paper: An atomic layer deposition (ALD) process was developed for depositing lanthanum fluoride thin films for the first time. The LaF3 thin films were grown between 225 and 350 °C using TiF4 and La(thd)3 as precursors. We believe that ALD LaF3 films can be used in various applications.

  4. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Full Papers
    5. Index

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