Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

June 2008

Volume 14, Issue 5-6

Pages 99–130

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communications
    5. Full Papers
    6. Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communications
    5. Full Papers
    6. Index
    1. Contents: (Chem. Vap. Deposition 5–6/2008) (pages 99–100)

      Article first published online: 19 JUN 2008 | DOI: 10.1002/cvde.200890009

  3. Communications

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communications
    5. Full Papers
    6. Index
    1. Platinum Protective Coatings Processed by Organometallic CVD (pages 103–106)

      Constantin Vahlas and Mathieu Delmas

      Article first published online: 19 JUN 2008 | DOI: 10.1002/cvde.200704258

      Communication: Platinum deposition by OMCVD from (Me3(MeCp)Pt) for protective coatings applications has been studied. Films grown at 473 K and 573 K on a Ti6242 alloy show a continuous microstructure, with growth rate of 19 nm · min−1 and 2.5 nm · min−1, respectively. No preferential orientation is observed at the latter temperature, while at 473 K films are textured following (111) orientation. The plot of thicknesses versus time at 473 K reveals an induction period followed by an autocatalytic growth. Platinum acts as a catalyst for the precursor decomposition when clusters reach critical size. At 573 K desorption of precursor from the surface prevents autocatalytic behaviour to appear resulting in decrease of the growth rate.

    2. CVD-Produced Polycrystalline Silicon Thin Film Prepared by Fluorine-Mediated Crystal Growth on a Glass Substrate and its Thin Film Transistor Application (pages 107–110)

      Cheolhyun Lim, Jungwoo Lee and Junichi Hanna

      Article first published online: 19 JUN 2008 | DOI: 10.1002/cvde.200804260

      Communication: A set of the source gases Si2H6 and F2 in a conventional low-pressure thermal CVD has enabled the direct preparation of device-grade poly-Si films at 450 °C. Field-effect mobility exceeding 60 cm2/Vs and crystallinity exceeding 90% in bottom-gate TFTs have been achieved; the high mobility is associated with fast nucleation in the early stage of crystal growth, which has been revealed by AFM and TEM images.

  4. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communications
    5. Full Papers
    6. Index
    1. Growth of SmNiO3 Thin Films on LaAlO3 Single Crystals (pages 111–114)

      Nejib Ihzaz, Mohamed Oumezzine, Jens Kreisel, Henri Vincent and Stephane Pignard

      Article first published online: 19 JUN 2008 | DOI: 10.1002/cvde.200706672

      Full Paper: Experimental results are presented on the growth of SmNiO3 thin films by a liquid source MOCVD technique equipped with a belt evaporation system. On Si(001) single crystalline substrate, the growth leads to a mixture of binary oxides. In the case of the perovskite substrate LaAlO3(001), the SmNiO3 phase is stabilized and a cube-on-cube epitaxy is obtained.

    2. Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate (pages 115–122)

      Alfio A. Scalisi, Roberta G. Toro, Graziella Malandrino, Maria E. Fragalà and Giuseppe Pezzotti

      Article first published online: 19 JUN 2008 | DOI: 10.1002/cvde.200706674

      Thumbnail image of graphical abstract

      Full Paper: Room-temperature cathodoluminescence spectroscopy has been used to characterize the optical properties of the ZnO nanostructures deposited by a catalyst-free MOCVD approach onto various substrates, such as SrTiO3(100), Si(100), and Al2O3(0001), using a novel diamine (N,N,N′,N′-tetramethylethylenediamine) adduct of zinc bis-2 thenoyl-trifluoroacetonate.

    3. Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate-last CMOS and MIM Devices (pages 123–128)

      Mindaugas Lukosius, Christian Wenger, Sergej Pasko, Hans-Joachim Müssig, Bernhard Seitzinger and Christoph Lohe

      Article first published online: 19 JUN 2008 | DOI: 10.1002/cvde.200806695

      Full Paper: Thin films of TiN from tetrakisdiethylamidotitanium (TDEAT) have been deposited by Atomic-Vapor-Deposition technique (AVD). Process temperature and precursor concentration have a strong influence on the morphology (crystallinity, roughness) and therefore on the resistivity of TiN films. Resistivity dependence on oxygen content (from XPS) is presented. The possibility of use of TiN as electrode material in MIM structures as well as a gate electrode in CMOS transistors is discussed.

  5. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communications
    5. Full Papers
    6. Index

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