Surface Science Contribution to the BEN Control on Si(100) and 3C-SiC(100): Towards Ultrathin Nanocrystalline Diamond Films (pages 187–195)
Jean-Charles Arnault, Samuel Saada, Sophie Delclos, Licinio Rocha, Luciana Intiso, Riccardo Polini, Alon Hoffman, Shaul Michaelson and Philippe Bergonzo
Article first published online: 15 AUG 2008 | DOI: 10.1002/cvde.200706659
Full Paper: Deposition of thin nanocrystalline diamond films requires a high control of the nucleation stage. The successive steps of the Bias Enhanced Nucleation process have been in situ studied on Si (100) and 3C-SiC (100). The formation of a thin SiC layer during the Plasma Exposure for Parameters Stabilization step leads us to study the plasma / surface interactions on 3C-SiC (100) surfaces. The C-terminated 3C-SiC (100) demonstrates a large inertia. Surface analysis reveals low damages after BEN on it.