Chemical Vapor Deposition

Cover image for Vol. 15 Issue 10‐12

December, 2009

Volume 15, Issue 10-12

Pages 255–350

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Contents: (Chem. Vap. Deposition 10–11–12/2009) (pages 255–257)

      Article first published online: 18 DEC 2009 | DOI: 10.1002/cvde.200990010

  3. Communication

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor (pages 259–261)

      Jacqueline S. Wrench, Kate Black, Helen C. Aspinall, Anthony C. Jones, John Bacsa, Paul R. Chalker, Peter J. King, Matthew Werner, Hywel O. Davies and Peter N. Heys

      Article first published online: 3 DEC 2009 | DOI: 10.1002/cvde.200904279

      Thumbnail image of graphical abstract

      The novel monomeric Ce(IV) alkoxide [Ce(mmp)4] (mmp = OCMe2CH2OMe) (see crystal structure) has been synthesized and structurally characterized. It has been used successfully as a precursor for the deposition of high-purity CeO2 thin films by liquid-injection MOCVD and ALD.

  4. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Tris(2,4-pentanedionato)scandium(III) as a Precursor for Plasma-Assisted Liquid Injection CVD to Deposit Nanocrystalline Scandia Thin Films (pages 262–268)

      Jayapragasam Selvakumar, Vinjamoor S. Raghunathan and Karachalacheruvu S. Nagaraja

      Article first published online: 3 DEC 2009 | DOI: 10.1002/cvde.200906792

      Equilibrium vapor pressure and ΔsubH° of tris(2,4-pentanedionato)- scandium(III) were measured using TG-based transpiration apparatus. Nanocrystalline cubic Sc2O3 thin films were deposited by plasma assisted liquid injection chemical vapor deposition (PALICVD) using a mixture of Sc(acac)3 and triglyme. Films were characterized by XRD, SEM and EDX for their composition and morphology.

    2. Etching of Nb2O5 Thin Films by NbCl5 (pages 269–273)

      Kjell Knapas, Antti Rahtu and Mikko Ritala

      Article first published online: 3 DEC 2009 | DOI: 10.1002/cvde.200906795

      The effect of NbCl5 vapor on Nb2O5 thin films was studied with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM) in situ in an ALD reactor. Nb2O5 was deposited from Nb(OEt)5 and water in the same reactor. NbCl5 was found to etch the Nb2O5 film producing volatile NbOCl3. Furthermore the possibility to deposit Nb2O5 from in situ generated NbOCl3 and water is pointed out.

    3. CVD in Weakly Rarefied Rotating Disk Flows (pages 274–280)

      Taichang Zhang, Peng Zhang, Chung K. Law and Fei Qi

      Article first published online: 8 DEC 2009 | DOI: 10.1002/cvde.200906805

      CVD in a weakly rarefied rotating disk flow was numerically investigated by using the SPIN code modified by including slip boundary conditions for velocity, concentration and temperature, thereby extending the capability of the code to describe weakly rarefied flows. A model reaction mechanism for silicon deposition, including the gas-phase decomposition of silane to silylene and the surface reactions of silane and silylene, was used to demonstrate rarefied gas effects.

    4. Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis (pages 281–290)

      Juanli Deng, Kehe Su, Qingfeng Zeng, Xin Wang, Laifei Cheng, Yongdong Xu and Litong Zhang

      Article first published online: 8 DEC 2009 | DOI: 10.1002/cvde.200806757

      The temperature, pressure and the molar ratio of the injected gas mixture for the deposition of the condensed phases in the MTS/H2 temperature CVD system were investigated in detail thermodynamically with a revised database including more reaction intermediates and free radicals.

    5. Enhanced Field Electron Emission Properties of Hybrid Carbon Nanotubes Synthesized by RF-PECVD (pages 291–295)

      Guangmin Yang, Qiang Xu, Xin Wang, Hongwei Tian, Weitao Zheng, Chun Cheng Yang and Sean Li

      Article first published online: 4 DEC 2009 | DOI: 10.1002/cvde.200806776

      In this work, pristine carbon nanotubes (CNTs) are grown in-situ with a variety of carbon allotropes (e.g., carbon nanoonions, nanocones, thin nanotubes, etc.) attached on the surface of the CNTs. The nanostructures of the hybrid carbon materials are characterized with transmission electron microscopy (TEM), and the structural dependence of field electron emission properties was investigated. It is found that the hybrid CNTs exhibit exotic morphologies having excellent field electron emission properties. These findings provide a simple synthesis method to assemble the carbon nanomaterials and a new insight into the fundamental understanding of high-performance CNTs towards applications in field-emission devices.

    6. Layer-by-Layer Growth of GeSbTe Thin Films by Metal-Organic CVD for Phase Change Memory Applications (pages 296–299)

      Ran-Young Kim, Ho-Gi Kim, Kyoung-Woo Park, Jun-Ku Ahn and Soon-Gil Yoon

      Article first published online: 3 DEC 2009 | DOI: 10.1002/cvde.200906791

      The GeTe and GeSbTe films have completely filled the trench structure and they show well-crystallized phases, and exhibit stoichiometric variations along the depth of the trench. The concept of layer-by-layer MOCVD could be applied for depositing GST and GeTe films from constituent precursors with large differences in decomposition temperatures, provided the composition variation can be overcome.

    7. CVD of Copper(I) Nitride (pages 300–305)

      Anna Fallberg, Mikael Ottosson and Jan-Otto Carlsson

      Article first published online: 3 DEC 2009 | DOI: 10.1002/cvde.200906794

      Thin films of copper(I) nitride (Cu3N) have successfully been deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfac)2), ammonia and water as precursors. In this article, the influences of process parameters such as precursor mass flow and deposition temperature on the growth rate, phase content, chemical composition and morphology have been studied.

    8. Synthesis of Crystalline Carbon Nitride Nanocone Arrays by Direct-Current Discharge Plasma-Assisted CVD (pages 306–311)

      Wei Hu, Ning Xu, Xiaofeng Xu, Jiada Wu, Yiqun Shen and Zhifeng Ying

      Article first published online: 3 DEC 2009 | DOI: 10.1002/cvde.200906802

      Crystalline carbon nitride nanocone arrays were prepared on Co/Ni covered silicon wafers by a rather simple and facile direct-current abnormal glow discharge plasma assisted chemical vapor deposition method. The as-grown carbon nitride nanocones are vertically aligned in arrays with rather perfect crystallinity and the smallest tip diameters of 2–3 nm. Based on the optical emission spectra from the abnormal glow discharge plasma, the growth mechanism of the as-grown CNNCs was discussed.

    9. Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor (pages 312–319)

      Hongtao Wang, Roy G. Gordon, Roger Alvis and Robert M. Ulfig

      Article first published online: 8 DEC 2009 | DOI: 10.1002/cvde.200906789

      High quality ruthenium thin films were deposited by ALD with bis(N,N′-di-tert-butylacetamidinato) ruthenium(II) dicarbonyl and O2. The film crystallinity, density, and resistivity strongly depend on the O2 exposure. At maximun O2 exposure, the films have the lowest resistivity, highest density and best crystallinity. The C impurity is mostly segregated along grain boundaries and the O is more uniformly dissolved in the Ru film.

    10. Iridium CVD using di-µ-Chloro-tetrakis(trifluorophosphine)- diiridium (I) Precursor, in-situ generated from Chlorotetrakis(trifluorophosphine)iridium (pages 320–326)

      Phong Dinh Tran, Marie-Geneviève Barthes-Labrousse and Pascal Doppelt

      Article first published online: 8 DEC 2009 | DOI: 10.1002/cvde.200906788

      Highly pure and conformal iridium films have been deposited on SiO2/Si and Ta/TaN substrates at low temperatures, particularly with co-reactant oxygen, using [IrCl(PF3)2]2 precursor. This potential and air-unstable precursor was generated in-situ in the CVD reactor by decomposition reaction of IrCl(PF3)4, a more air stable but more thermally sensitive compound.

    11. Structural, Optical, and Electrical Characterization of ZnO and Al-doped ZnO Thin Films Deposited by MOCVD (pages 327–333)

      Maria Elena Fragalà, Graziella Malandrino, Maria Michela Giangregorio, Maria Losurdo, Giovanni Bruno, Stefano Lettieri, Luigi Santamaria Amato and Pasquale Maddalena

      Article first published online: 8 DEC 2009 | DOI: 10.1002/cvde.200906790

      Thumbnail image of graphical abstract

      High crystalline and transparent Al-doped zinc oxide (AZO) films have been deposited on quartz by Metal Organic Chemical Vapor Deposition (MOCVD) using a Zn/Al safe, friendly-use, easily to handle multimetal liquid precursor source. Structural, optical and electrical characterization confirms the crystalline preferential c-axis orientation, the effect of Al on film resistivity and the high optical quality of deposited films.

    12. Deposition of Niobium Nitride Thin Films from Tert-Butylamido-Tris-(Diethylamido)-Niobium by a Modified Industrial MOCVD Reactor (pages 334–341)

      Tobias B. Thiede, Harish Parala, Knud Reuter, Gerd Passing, Stephan Kirchmeyer, Jörn Hinz, Martin Lemberger, Anton J. Bauer, Davide Barreca, Alberto Gasparotto and Roland A. Fischer

      Article first published online: 18 DEC 2009 | DOI: 10.1002/cvde.200906810

      Thumbnail image of graphical abstract

      Niobium nitride thin films were deposited on 2″ silicon (100) wafers using a modified industrial MOCVD reactor (AIX-200RF), starting from tert-butylamido-tris-(diethylamido)-niobium (TBTDEN) and ammonia. Four point probe measurements revealed lowest specific resistivities in the range of 500–600 µΩ cm. For the first time, data on a NbN/SiO2/p-Si gate stack fabricated using the grown niobium nitride films are reported.

    13. Novel Low Melting Point Barium and Strontium Precursors for the MOCVD Growth of Barium-Strontium-Titanate Films (pages 342–349)

      Natalia Kuzmina, Irina Malkerova, Andrey Alikhanyan, Dmitry Tsymbarenko, Konstantin Lyssenko, Oleg Kreinin, Gregory Shuster, Evgeny Lakin and Emil Zolotoyabko

      Article first published online: 18 DEC 2009 | DOI: 10.1002/cvde.200906786

      Novel barium and strontium precursors belonging to the family of volatile complexes of the alkaline earth element fluorinated β-diketonates were synthesized, tested, and used for the MOCVD of epitaxial barium-strontium-titanate thin films on SrTiO3 substrates.

  5. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index

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