Chemical Vapor Deposition

Cover image for Vol. 16 Issue 4‐6

June 2010

Volume 16, Issue 4-6

Pages 119–191

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
  3. Communication

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure (pages 123–126)

      Nicolas Reuge, Jeannette Dexpert-Ghys and Brigitte Caussat

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.200904280

      Bi2O3 films have been deposited on alumina particles by Fluidized Bed Chemical Vapor Deposition at atmospheric pressure, using bismuth triphenyl and oxygen as precursors. In the operating range tested, the presence of Bi on the whole particles has been evidenced by EDX, and the existence of the α and γ phases of Bi2O3 has been revealed consistently by Raman spectroscopy and by XRD.

  4. Full Papers

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index
    1. Raman Studies of Nano- and Ultra-nanocrystalline Diamond Films Grown by Hot-Filament CVD (pages 127–135)

      Frederik Klauser, Doris Steinmüller-Nethl, Reinhard Kaindl, Erminald Bertel and Norbert Memmel

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.200906827

      Multi-wavelength visible-Raman spectroscopy was used to characterize HFCVD-grown nanocrystalline diamond films. The components forming the Raman spectra were evaluated following common interpretation models. The withdrawn information was correlated to film properties like grain size, morphology, roughness or refractive index derived from AFM, XRD and Ellipsometry.

    2. Growth of Single-Walled Carbon Nanotubes from Tellurium Nanoparticles by Alcohol CVD (pages 136–142)

      Yong Qian, Shaoming Huang, Yanhu Bai, Jiangying Chen, Lijie Zhang, Weipeng Guang and Shan Wang

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.200806772

      This paper demonstrates that semiconductor Te is an efficient catalyst for SWNTs growth. By using ethanol as carbon source and TeCl4 as catalyst procursor superlong well-oriented SWNT arrays with high percentage semiconducting can be generated for various SWNT-based nanodevices fabrication and applications.

    3. In-Situ Growth and Characterization of Highly Textured La0.9Sr0.1MnO3 Films on LaAlO3(100) Substrates (pages 143–150)

      Roberta G. Toro, Graziella Malandrino, Laura M.S. Perdicaro, Davide M.R. Fiorito, Antonello Andreone, Gianrico Lamura and Ignazio L. Fragalà

      Version of Record online: 29 JUN 2010 | DOI: 10.1002/cvde.200906778

      Nanostructured LSMO films were grown on LaAlO3 (100) substrates following a very simple procedure and their properties were characterized by XRD and scanning electron microscopy. Resistivity has been measured by the standard four probe method revealing transport and magnetic properties better than those reported for the bulk samples.

    4. Synthesis of Gallium Nitride Nanoparticles by Microwave Plasma-Enhanced CVD (pages 151–156)

      Manabu Shimada, Wei-Ning Wang and Kikuo Okuyama

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.200906811

      Gallium nitride nanoparticles were synthesized by a microwave plasma enhanced chemical vapor deposition method. The as-prepared nanoparticles showed well dispersity, satisfactory stoichiometric ratio and good photoluminescence properties, owing to their strong negative charging and the improvement of the process, respectively.

    5. Growth and Characterization of Ti-Ta-O Thin Films on Si Substrates by Liquid Injection MOCVD for High-k Applications from Modified Titanium and Tantalum Precursors (pages 157–165)

      Anjana Devi, Malte Hellwig, Davide Barreca, Harish Parala, Reji Thomas, Hans-Werner Becker, Ram. S. Katiyar, Roland A. Fischer and Eugenio Tondello

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.200906813

      Thin films of TiO2 and Ti-Ta-O were grown on Si(100) substrates via liquid injection MOCVD using amide-malonate complexes of Ti and Ta. The stoichiometry of Ti-Ta-O films depended strongly on the substrate temperature employed for film growth. The films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Rutherford back scattering spectroscopy, X-ray photoelectron spectroscopy and current-voltage measurements.

    6. Relationship Between Geometric Structures of Catalyst Particles and Growth of Carbon Nanocoils (pages 166–169)

      Da-Wei Li, Lu-Jun Pan, Dong-Ping Liu and Nai-Sen Yu

      Version of Record online: 29 JUN 2010 | DOI: 10.1002/cvde.200906832

      Catalyst particles for the growth of carbon nanocoils contain catalytically active facets and carbon precipitation facets. The bending of carbon tubules results from the rate of surface diffusion being larger than that of bulk diffusion. Catalysts with different numbers of active facets and symmetric structures lead to the growth of carbon nanocoils consisting of different numbers of nanotubules.

    7. Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O (pages 170–178)

      Christoph Adelmann, Dieter Pierreux, Johan Swerts, Daan Dewulf, An Hardy, Hilde Tielens, Alexis Franquet, Bert Brijs, Alain Moussa, Thierry Conard, Marlies K. Van Bael, Jan W. Maes, Malgorzata Jurczak, Jorge A. Kittl and Sven Van Elshocht

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/cvde.200906833

      For future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-κ material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric permittivity and a large band gap. We demonstrate the atomic-layer deposition of GdxAl2−xO3 layers using Gd(iPrCp)3, TMA, and H2O or O3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better GdxAl2−xO3 film properties than O3 although the accessible composition range is limited because of the hygroscopic nature of Gd2O3.

    8. Synthesis of WO3 Nanogranular Thin Films by Hot-Wire CVD (pages 179–184)

      Z. Silvester Houweling, John W. Geus and Ruud E. I. Schropp

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.200906838

      In this work, thin films of tungsten oxide are investigated that are deposited on glassy carbon substrates with an area of 1 × 1cm2. The films are deposited by exposing heated tungsten filaments to an air flow at a reduced pressure and collecting the vapor species on the substrate. The films were characterized by Raman, XRD, SEM, RBS and EDS for their chemical composition, crystallinity, morphology and atomic composition.

    9. MOCVD and Physicochemical Characterization of (HfO2)x(Al2O3)1-x Thin Films (pages 185–190)

      Tamara P. Smirnova, Mikhail S. Lebedev, Natalia B. Morozova, Peter P. Semyannikov, Ksenia V. Zherikova, Vasily V. Kaichev and Yurii V. Dubinin

      Version of Record online: 9 JUN 2010 | DOI: 10.1002/cvde.201006840

      Investigation of the thermal behavior of Hf(dpm)4 vapours in vacuum was carried out. An approach for obtaining the films of (HfO)x(Al2O3)1-x alloys were developed. The use of a source containing a mixture of two precursors differing from each other in volatility, notably Hf(dpm)4 (dpm = dipivaloylmethanate, 2,2,6,6-tetramethylheptane-3,5-dionate) and Al(acac)3(acac= pentane-2,4-dionate), allowed us to employ the possibilities of combinatorial chemistry, and to obtain and analyze a number of different compositions of alloys. The structure of the film depends on the molar fraction of Al2O3 in alloys. For Al ≥ 30 atomic %, amorphization of the structure occurs.

  5. Index

    1. Top of page
    2. Cover Picture
    3. Contents
    4. Communication
    5. Full Papers
    6. Index

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