Chemical Vapor Deposition

Cover image for Vol. 17 Issue 1‐3

March 2011

Volume 17, Issue 1-3

Pages 3–68

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
  2. Masthead

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. Masthead

      Article first published online: 3 JUN 2011 | DOI: 10.1002/cvde.201190004

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. Contents: (Chem. Vap. Deposition 1–2–3/2011) (pages 3–5)

      Article first published online: 16 MAR 2011 | DOI: 10.1002/cvde.201190001

  4. Communications

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. MOCVD of Vanadium Oxide Films with a Novel Vanadium(III) Precursor (pages 6–8)

      Laura Crociani, Giovanni Carta, Marco Natali, Valentino Rigato and Gilberto Rossetto

      Article first published online: 24 FEB 2011 | DOI: 10.1002/cvde.201004291

      In this communication we report the synthesis and characterization of the vanadium (III) alkoxide [V(OCMe2CH2OMe)3], which presents an appreciable volatility (55°C/1.5Torr), its successful use as MOCVD precursor for the deposition of pure VO2 and V2O5 films and the characterization of the films by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD) and Cyclic Voltammetry.

    2. Growth of Few-Layer Graphene on a Thin Cobalt Film on a Si/SiO2 Substrate (pages 9–14)

      Eunho Kim, Hyosub An, Hyunchul Jang, Won-Ju Cho, Naesung Lee, Wan-Gyu Lee and Jongwan Jung

      Article first published online: 24 FEB 2011 | DOI: 10.1002/cvde.201004296

      Few-layered sheets of graphene were synthesized on polycrystalline thin Co and Ni films by low pressure chemical vapor deposition. On average, thinner layers of graphene were synthesized on Co than on the conventional Ni at the same process conditions, but slightly higher defects were detected on Co-grown graphene layers than on Ni-grown ones. Possible explanations for this are suggested.

  5. Full Papers

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. Methylated [(benzene)(1,3-butadiene)Ru0] Derivatives as Novel MOCVD Precursors with Favorable Properties (pages 15–21)

      Ilona Jipa, M. Aslam Siddiqi, Rehan A. Siddiqui, Burak Atakan, Hubertus Marbach, Till Cremer, Florian Maier, Hans-Peter Steinrück, Katia Danova, Nadejda Popovska, Frank W. Heinemann and Ulrich Zenneck

      Article first published online: 16 MAR 2011 | DOI: 10.1002/cvde.201006853

      Thumbnail image of graphical abstract

      Methylated [(benzene)(1,3-butadiene)Ru(0)] derivatives 1–3 have been designed and prepared as novel metal organic chemical vapor deposition (MOCVD) precursor complexes. They can be evaporated without decomposition below 100°C, and thin Ru films can be obtained from 200°C substrate temperature on. Purity of the films is granted by the inherent properties of both the precursor complexes and the catalytically active freshly formed ruthenium film surfaces.

    2. Boron Instability in CVD-Produced Borophosphosilica Films (pages 22–29)

      Yuri V. Sokolov

      Article first published online: 16 MAR 2011 | DOI: 10.1002/cvde.201006861

      The degradation of as-deposited CVD BPSG films was investigated. Different mechanisms of boron out-gassing at room temperature were discussed. A new proposed mechanism is based on the effect of boric oxide charging, which was studied by the surface photo-voltage technique. The role of the undoped SiO2 layer deposited below or/and above BPSG film in terms of stability enhancement of the latter was studied and discussed.

    3. Aerosol-Assisted CVD of Titanium Dioxide Thin Films from Methanolic Solutions of Titanium Tetraisopropoxide; Substrate and Aerosol-Selective Deposition of Rutile or Anatase (pages 30–36)

      Cynthia Edusi, Geoffrey Hyett, Gopinathan Sankar and Ivan P. Parkin

      Article first published online: 25 FEB 2011 | DOI: 10.1002/cvde.201006872

      Titanium dioxide thin films were synthesised using aerosol assisted chemical vapour deposition (AACVD) of titanum (IV) isopropoxide (TTIP) in methanol. Deposition was carried out on glass, steel and titanium substrates at 400–550°C. The films produced morphologies that were radically different to that from typical aerosol assisted processes and from the use of TTIP in low or atmospheric pressure CVD.

    4. Growth of the Initial Atomic Layers of Ta-N Films During Atomic Layer Deposition on Silicon-Based Substrates (pages 37–44)

      Steffen Strehle, Daniela Schmidt, Matthias Albert and Johann W. Bartha

      Article first published online: 24 FEB 2011 | DOI: 10.1002/cvde.201006874

      The growth of ultrathin Ta-N films at the initial stages of atomic layer deposition was investigated by in situ X-ray photo-electron spectroscopy (XPS) starting from the first precursor pulse. The chemical composition, the growth mode and the film thickness are derived in dependence on the cycle number and the substrate chemistry.

    5. MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc (pages 45–53)

      Sobia Ashraf, Anthony C. Jones, John Bacsa, Alexander Steiner, Paul R. Chalker, Peter Beahan, Sarah Hindley, Rajesh Odedra, Paul A. Williams and Peter N. Heys

      Article first published online: 2 MAR 2011 | DOI: 10.1002/cvde.201006881

      Thumbnail image of graphical abstract

      Vertically aligned ZnO nanowires have been grown by liquid injection MOCVD using the dimethylzinc-bidentate ether adducts [Me2Zn(L)] (L=1,4-dioxane, 1,2-dimethoxyethane, 1,4-thioxane). The crystal structures of the complexes have also been determined.

    6. Observation of Structure-Sensitive Decomposition of Cp(allyl)Pd on Pd Nanodots Formed by MOCVD (pages 54–57)

      Axel Binder, Martin Seipenbusch and Gerhard Kasper

      Article first published online: 25 FEB 2011 | DOI: 10.1002/cvde.201006883

      The decomposition kinetics of Cyclopentadienyl-allyl-Pd [Cp(allyl)Pd] on silica and titania substrates were investigated by continuous MO-CVD at atmospheric pressure. While the initially decomposition of precursor molecules on the OH groups depends strongly on process conditions like precursor concentration or decomposition temperature, the autocatalytic decomposition is very rapid on very small Pd clusters, but comes to a standstill at a Pd particle size around 2nm, regardless of process parameters.

    7. Curauá Fiber Microimaging, Atomic Layer Deposition of Metal Oxide Films, and Obtaining of Nanowalled Microtubes (pages 58–64)

      Iryna Grafova, Marianna Kemell, Juliana N. Lunz, Maria de Fátima V. Marques, Andriy Grafov and Markku Leskelä

      Article first published online: 24 FEB 2011 | DOI: 10.1002/cvde.201006886

      New support was used for ALD growth: the fibre of Curauá (Ananas erectifolius). This promising lignocellulosic material was studied insufficiently. SEM imaging of fibres revealed dense structure and nanoveinlets of cellulose agglomerates. Thin Al2O3 and Ta2O5 coatings of thicknesses 30nm ÷ 130nm were grown by ALD. They are continuous, resistant and homogeneous. Both coatings and nanowalled microtubes, obtained by oxidative annealing replicate well the irregular fibre relief.

    8. Copper Seed Layer Deposition by a New Liquid Precursor (pages 65–68)

      Sang-Woo Kang, Yong-Hyeon Shin, Jin-Tae Kim, Ju-Young Yun, Yun-Hee Chang and Il-Doo Yang

      Article first published online: 16 MAR 2011 | DOI: 10.1002/cvde.201006899

      Cu(hfac)2(TEA) (hfac=1,1,1,5,5,5-hexafluoroacetylacetonate, TEA (triethylamine)) is a new liquid Cu(II) precursor. Using Cu(hfac)2(TEA), we successfully deposited Cu thin films as a seed layer even at low the deposition temperature of 373K. To explain this behavior, the bonding status of Cu(hfac)2 in the presence of TEA was determined by density-functional theory. The theoretical bond length of Cu-O in Cu(hfac)2 was significantly greater (by 0.06 Å) than that without an adduct ligand.

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