Developments of TaN ALD Process for 3D Conformal Coatings (pages 284–295)
Virginie Brizé, Thomas Prieur, Perrine Violet, Laurent Artaud, Grégory Berthomé, Elisabeth Blanquet, Raphaël Boichot, Stéphane Coindeau, Béatrice Doisneau, Alexis Farcy, Arnaud Mantoux, Ioana Nuta, Michel Pons and Fabien Volpi
Article first published online: 15 DEC 2011 | DOI: 10.1002/cvde.201100045
ALD of TaN thin films is explored using the combination between the thermodynamical behavior of the precursor, mass transfer in the reactor and the operating conditions. TaN thin film has been deposited on very complex shape substrates, such as nanodots, TSV, and silicon.