Chemical Vapor Deposition

Cover image for Vol. 17 Issue 7‐9

September, 2011

Volume 17, Issue 7-9

Pages 173–269

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
  2. Masthead

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. Masthead

      Article first published online: 22 SEP 2011 | DOI: 10.1002/cvde.201190008

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. Contents: (Chem. Vap. Deposition 7–8–9/2011) (pages 173–176)

      Article first published online: 22 SEP 2011 | DOI: 10.1002/cvde.201190006

  4. Communications

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. Stoichiometry of Nickel Oxide Films Prepared by ALD (pages 177–180)

      Julien Bachmann, Andriy Zolotaryov, Ole Albrecht, Silvana Goetze, Andreas Berger, Dietrich Hesse, Dmitri Novikov and Kornelius Nielsch

      Article first published online: 1 SEP 2011 | DOI: 10.1002/cvde.201004300

      Nickel oxide films obtained from nickelocene and ozone by atomic layer deposition at 230°C are substoichiometric, but have the crystal structure of NiO. Oxygen can be driven out of the solid by annealing under inert atmosphere, or added into it via aerobic annealing.

    2. Local Kinetic Modeling of Aluminum Oxide Metal-Organic CVD From Aluminum Tri-isopropoxide (pages 181–185)

      Hugues Vergnes, Diane Samélor, Alain N. Gleizes, Constantin Vahlas and Brigitte Caussat

      Article first published online: 31 AUG 2011 | DOI: 10.1002/cvde.201004301

      A numerical model for the MetalOrganic CVD of alumina from aluminium tri-isopropoxide (ATI), based on an apparent heterogeneous kinetic law was developed using the Computational Fluid Dynamics (CFD) code Fluent. The kinetic parameters were fitted from experimental deposition rates obtained between 360°C and 496°C at a total pressure of 5Torr. Simulated local profiles of alumina deposition rate allowed reproducing the non uniformity of experimental deposition rates due to the dominance of convective gas transport and the depletion of ATI.

    3. Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Coatings Produced by Remote Hydrogen Microwave Plasma CVD from Bis(dimethylsilyl)ethane - a Novel Single-Source Precursor (pages 186–190)

      Aleksander M. Wróbel, Agnieszka Walkiewicz-Pietrzykowska, Pawel Uznanski and Bartosz Glebocki

      Article first published online: 31 AUG 2011 | DOI: 10.1002/cvde.201104302

      The effect of substrate temperature (TS) on the growth rate, chemical structure, surface morphology, density, refractive index and photoluminescence (PL) of a-SiC:H films is reported. The increase in TS from 30°C to 400°C causes the elimination of organic moieties from the film and the formation of Si-carbidic network structure. The films produced at high TS are morphologically homogeneous, dense, and hard materials of high refractive index and extremely low PL intensity.

  5. Full Papers

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communications
    6. Full Papers
    1. ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr (pages 191–197)

      Heeju Lee, Kunhee Kim, Jeong-Jun Woo, Doo-Jin Jun, Youngsoo Park, Yunsoo Kim, Hong Won Lee, Yong Jai Cho and Hyun Mo Cho

      Article first published online: 9 SEP 2011 | DOI: 10.1002/cvde.201106879

      A new gallium precursor, dimethylgallium isopropoxide (DMGIP), was employed in atomic layer deposition and metalorganic chemical vapor deposition of Ga2O3 thin films. DMGIP is a liquid at room temperature with a reasonably high vapor pressure. The characterization of the precursor and thin films of Ga2O3 have been performed and DMGIP has been found suitable as gallium precursor for the preparation of Ga2O3 films.

    2. Fluorine-Free Superhydrophobic Microstructured Films Grown by PECVD (pages 198–203)

      Vincent Rouessac, Andreea Ungureanu, Soumia Bangarda, André Deratani, Chia-Hao Lo, Ta-Chin Wei, Kueir-Rarn Lee and Juin-Yih Lai

      Article first published online: 31 AUG 2011 | DOI: 10.1002/cvde.201106903

      A superhydrophobic surface with a water contact angle over 160° has been synthesized in one step starting with a fluorine free precursor by PECVD (low frequency, capacitively coupled). Deposition was carried out on polished silicon wafer, glass plate and hydrophilic macroporous membrane. Water transport of such modified membranes has been studied.

    3. Thermal Oxidation of Parylene X (pages 204–210)

      Jay J. Senkevich

      Article first published online: 1 SEP 2011 | DOI: 10.1002/cvde.201106904

      The thermal oxidation of parylene X, poly(ethynyl-p-xylylene-co-p-xylylene), a cross-linkable room-temperature chemical vapor deposited copolymer, is presented and compared to parylene N, poly(p-xylylene), a linear chain crystallizable polymer. The degradation mechanism of the two polymers is much different owing to the cross-linked structure of parylene X.

    4. Effects of MOCVD Thin Cobalt Films' Structure and Surface Characteristics on their Magnetic Behavior (pages 211–220)

      Nikolaos Papadopoulos, Chaido-Stefania Karayianni, Petros Tsakiridis, Evangelia Sarantopoulou and Evangelos Hristoforou

      Article first published online: 13 SEP 2011 | DOI: 10.1002/cvde.201106907

      The MOCVD of cobalt thin films on silicon and silicon dioxide substrates is reported. Cobalt tricarbonyl nitrosyl, cobalt acetylacetonate and cocalt carbonyl are examined as potential precursors, either by liquid or by aerosol delivery. Highly pure and planar Co films are deposited from Co2(CO)8 dissolved in dichloromethane. A non-hysteretic GMR behavior in the presence of an externally applied magnetic field normal to the films' surface is also reported.

    5. Hexagonal Boron Nitride from a Borazine Precursor for Coating of SiBNC Fibers using a Continuous Atmospheric Pressure CVD Process (pages 221–227)

      Yaping Ye, Uta Graupner and Reinhard Krüger

      Article first published online: 31 AUG 2011 | DOI: 10.1002/cvde.201106911

      A vertical hot wall reactor was used to deposit h-BN from borazine as the precursor. By means of static deposition on Si(100) substrates the influence of ammonia addition, precursor concentration, deposition temperature and total gas velocity as well as the structure of the coatings were investigated. Perceptions from this were used to continuously coat SiBNC multifilament fibers in an atmospheric pressure process.

    6. Chemical Vapor Synthesis and Characterization of Manganese Oxides (pages 228–234)

      Hoang Anh Le, Sungmin Chin, Eunseuk Park, Le Thuy Linh, Gwi-Nam Bae and Jongsoo Jurng

      Article first published online: 2 SEP 2011 | DOI: 10.1002/cvde.201106914

      Manganese oxides nanoparticles were synthesized by a chemical vapor process using manganese(0) carbonyl as the precursor. The material synthesis temperatures were varied from 500 to 1500 °C at 200 °C intervals. The physico-chemical properties of MnOx were analyzed by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), BET surface area, and X-ray photoelectron spectroscopy (XPS).

    7. CVD of Poly(α,α′-dimethyl-p-xylylene) and Poly(α,α,α′, α′-tetramethyl-p-xylylene)-co-poly(p-xylylene) from Alkoxide Precursors I: Optical Properties and Thermal Stability (pages 235–240)

      Jay J. Senkevich

      Article first published online: 1 SEP 2011 | DOI: 10.1002/cvde.201106915

      Two novel parylene polymers poly(α,α′-dimethyl-p-xylylene) and poly(α,α,α′,α′-tetramethyl-p-xylylene)-co-poly(p-xylylene) were deposited at room temperature via the remote pyrolysis, from the ease to synthesize, monomeric-based precursors. The former exhibits equivalent thermal stability to parylene N but is less birefringent, has a lower index of refraction and is soluble.

    8. CVD of Poly(α,α′-dimethyl-p-xylylene) and Poly(α,α,α′,α′-tetramethyl-p-xylylene)-co-poly(p-xylylene) from Alkoxide Precursors II: Thermal Oxidative Stability (pages 241–246)

      Jay J. Senkevich

      Article first published online: 2 SEP 2011 | DOI: 10.1002/cvde.201106916

      The thermal oxidative stability of two novel parylene polymers poly(α,α′-dimethyl-p-xylylene) and poly(α,α,α′,α′-tetramethyl-p-xylylene)-co-poly(p-xylylene) were studied as a function of temperature and time at 150 °C. Both α-methylated polymers show superior oxidation resistance in their as-deposited state compared to parylene N as a function of 30 min successive anneals; however, at 150 °C after post-deposition annealing they have inferior oxidation resistance compared to parylene N as a function of time.

    9. Aerosol-Assisted CVD of SnO2 Thin Films for Gas-Sensor Applications (pages 247–252)

      Toni T. Stoycheva, Stella Vallejos, Roman G. Pavelko, Viktor S. Popov, Vladimir G. Sevastyanov and Xavier Correig

      Article first published online: 13 SEP 2011 | DOI: 10.1002/cvde.201106917

      In this article is a report of SnO2 deposition by aerosol-assisted (AA)CVD from tin complexes, [Sn(18-Cr-6)Cl4] and [Sn(H2O)2Cl4](18-Cr-6). The structure and properties of the precursors, used to synthesize SnO2 layers by AACVD for the first time, are characterized with the help of X-ray diffraction (XRD), infrared (IR), and thermogravimetric analysis (TGA). Each complex is deposited by AACVD at 250, 400, and 500 °C in a flow of N2. The resulting films are studied by XRD and atomic force microscopy (AFM). Gas-sensing properties of the deposited layers are tested to 10 ppm NO2 in air. The maximum sensor response to the analyte is measured at 300 °C.

    10. Advanced Roll-to-Roll Plasma-Enhanced CVD Silicon Carbide Barrier Technology for Protection from Detrimental Gases (pages 253–260)

      L. Zambov, V. Shamamian, K. Weidner and M. Loboda

      Article first published online: 2 SEP 2011 | DOI: 10.1002/cvde.201106923

      Presented is a continuous roll-to-roll plasma enhanced chemical vapor deposition process for manufacturing of amorphous SiC barrier coatings on large area web-substrates using a prototype reactor. A key feature is the incorporation of the Penning discharge plasma source to provide magnetically confined, high-density plasma. The developed technology demonstrates significant achievements in barrier performance with water vapor transmission rate of less than 5E-4 g.m−2day−1 and durability of BCFs more than 500 hours.

    11. Growth of Atomically Smooth Epitaxial Nickel Ferrite Films by Direct Liquid Injection CVD (pages 261–269)

      Ning Li, Yu-Hsiang A. Wang, Milko N. Iliev, Tonya M. Klein and Arunava Gupta

      Article first published online: 31 AUG 2011 | DOI: 10.1002/cvde.201106930

      Epitaxial growth by direct liquid injection chemical vapor deposition of nickel ferrite films on MgO (100) and MgAl2O4 (100) is demonstrated using Ni(acac)2 and Fe(acac)3 (acac=acetylacetonate) in the solvent N,N-dimethyl formamide. This method is attractive for microwave device applications which require relatively thick (>1µm) and topographically smooth films. The dependence of film morphological, structural and magnetic properties on CVD processing conditions is reported.

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