Chemical Vapor Deposition

Cover image for Vol. 18 Issue 7‐9

September 2012

Volume 18, Issue 7-9

Pages 179–262

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
  2. Masthead

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Masthead: (Chem. Vap. Deposition 7–8–9/2012)

      Article first published online: 5 SEP 2012 | DOI: 10.1002/cvde.201290008

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Contents: (Chem. Vap. Deposition 7–8–9/2012) (pages 179–181)

      Article first published online: 5 SEP 2012 | DOI: 10.1002/cvde.201290006

  4. Communication

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Morphology and Growth Mechanism of Comb-like and Leaf-like ZnO Nanostructures (pages 182–184)

      Feng Shi and Chengshan Xue

      Article first published online: 19 JUL 2012 | DOI: 10.1002/cvde.201204311

      Comb-like ZnO nanostructures and leaf-like nanostructures with a high crystalline quality are fabricated by chemical vapor deposition without any metallic catalyst. One leaf-like nanostructure is formed by six comb-like nanostructures, which are gathered at the bottom edge of each comb-like nanostructure. Every comb-like nanostructure consists of a wide, long microbelt. The growth of the comb-like ZnO nanostructure includes nucleation, growth of the microbelt, and growth of the nanobelt array.

  5. Full Papers

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Transformation of Round-shaped Graphene Disks into Hexagonal Domains in CVD (pages 185–190)

      Lili Fan, Xueliu Fan, Jinquan Wei, Kunlin Wang, Dehai Wu and Hongwei Zhu

      Article first published online: 19 JUL 2012 | DOI: 10.1002/cvde.201206984

      Thumbnail image of graphical abstract

      A transformation of round-shape graphene disks into hexagonal domains during atmospheric CVD on copper substrates is observed. This result provides insight into the nucleation and growth mechanism of graphene, which represents an important first step toward the growth of large-area single-crystalline graphene.

    2. Effect of AACVD Processing Parameters on the Growth of Greenockite (CdS) Thin Films using a Single-Source Cadmium Precursor (pages 191–200)

      Muhammad Ali Ehsan, Huang Nay Ming, Misni Misran, Zainudin Arifin, Edward R. T. Tiekink, Ahmad P. Safwan, Mehdi Ebadi, Wan J. Basirun and Muhammad Mazhar

      Article first published online: 19 JUL 2012 | DOI: 10.1002/cvde.201206988

      A single source precursor Cd[S2CNCy2]2.py (1) is synthesized by a simple chemical reaction, analyzed, and used for the deposition of greenockite CdS thin films by the AACVD technique. The deposition parameters such as temperature, solvent, and nature of substrate are tuned to generate novel nanostructured layers and their optical and photoelectrochemical properties are studied.

    3. High Yield Preparation of Carbon Nanotube Arrays of Good Quality by CVD (pages 201–208)

      Shuxiu Shi, Hui Wang, Xitao Wang, Tao Xue, Weixin Hou, Lan Cui, Kui Lin, Fengmin Jin, Gang Cheng, Xiaoping Chen, Pei Yao and Shen Cui

      Article first published online: 19 JUL 2012 | DOI: 10.1002/cvde.201106975

      Thumbnail image of graphical abstract

      Multi-walled carbon nanotube arrays (MWCNTAs) of good quality are prepared in ∼7 wt.% by CVD at 850 °C, with cyclohexane and ferrocene purified beforehand. An SEM image of MWCNTAs is shown, from which the measured thickness is ∼200 µm and the calculated average growth rate is 25 µm/min. A few impurities are observable and the content of MWCNTs is 93.7 wt.%.

    4. Mass Spectrometric Monitoring of the Gas Phase during the CVD of Copper from Copper Cyclopentadienyl Triethylphosphine (pages 209–214)

      Asiya E. Turgambaeva, Nathalie Prud'homme, Vladislav V. Krisyuk and Constantin Vahlas

      Article first published online: 24 JUL 2012 | DOI: 10.1002/cvde.201106972

      Full Paper: Application of mass spectrometry (MS) for the investigation of MOCVD processes is demonstrated through the example of the deposition of Cu films from copper(I) cyclopentadienyltriethylphosphine, CpCuPEt3. Through the example of co-deposition of Al-Cu films from dimethylamine alane and CpCuPEt3, it is shown that there is no mutual interaction of the precursors in the gas phase.

    5. A Comparative Study of the Properties of ZnO Nano/Microstructures Grown using Two Types of Thermal Evaporation Set-Up Conditions (pages 215–220)

      Ramin Yousefi, Farid Jamali-Sheini and Ali Khorsand Zak

      Article first published online: 24 JUL 2012 | DOI: 10.1002/cvde.201206979

      Thumbnail image of graphical abstract

      A comparative study between two thermal evaporation set-ups for growth of ZnO nano/microstructures is presented. The ZnO structures are grown on Si(111) substrates in different temperature zones. It is observed that different conditions of the thermal evaporation set-up can affect the morphology and optical properties of ZnO structures.

    6. Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors (pages 221–224)

      Henrik Pedersen, Carina Höglund, Jens Birch, Jens Jensen and Anne Henry

      Article first published online: 19 JUL 2012 | DOI: 10.1002/cvde.201206980

      Thumbnail image of graphical abstract

      Thin boron-carbon films are deposited at low temperature (400–600 °C) by thermally activated CVD, using the organoborane triethylboron (TEB) as a single precursor. Based upon these results, a deposition mechanism for boron-carbon films from TEB, where the TEB molecule is decomposed to BH3 and hydrocarbons, is suggested.

    7. Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors (pages 225–238)

      Christoph Adelmann, Annelies Delabie, Bart Schepers, Leonard N. J. Rodriguez, Alexis Franquet, Thierry Conard, Karl Opsomer, Inge Vaesen, Alain Moussa, Geoffrey Pourtois, Kristine Pierloot, Matty Caymax and Sven Van Elshocht

      Article first published online: 25 JUL 2012 | DOI: 10.1002/cvde.201106967

      Thumbnail image of graphical abstract

      The atomic layer deposition of Ta2O5 and TaSiOx from TaCl5, SiCl4, and H2O is reported. Si-incorporation is enabled because of the lower activation energy of SiCl4 chemisorption on TaOH-terminated surfaces with respect to SiOH-terminated ones. For optimum process conditions, amorphous films with good dielectric quality are obtained.

    8. Functional Nanoimprinting (pages 239–244)

      Hayley G. Andrews, Thomas J. Wood, Wayne C. E. Schofield and Jas Pal S. Badyal

      Article first published online: 26 JUL 2012 | DOI: 10.1002/cvde.201106970

      Thumbnail image of graphical abstract

      Full Paper: A cure activated nanolayer transfer technique is devised, which, when combined with soft imprinting (lithography), can be used to fabricate multiple surface functionalized replicas from the same mould without the need for a separate secondary functionalization step. This has been exemplified for the hierarchical roughnesses of plant leaves and moth wings to yield superhydrophobicity.

    9. Atomic Layer Deposition of WO3 Thin Films using W(CO)6 and O3 Precursors (pages 245–248)

      Jari Malm, Timo Sajavaara and Maarit Karppinen

      Article first published online: 14 AUG 2012 | DOI: 10.1002/cvde.201206986

      WO3 thin films are deposited from W(CO)6 and O3 by ALD. The ALD window is found at 195–205  °C with a growth rate of 0.23 Å per cycle. Film crystallinity is further improved by annealing under O2 and N2 atmospheres at 600–1000  °C. The WO3 process demonstrates that carbonyl compounds in general may be utilized as ALD precursors, making use of their straightforward chemistry and behavior.

    10. Deposition of Hexagonal Boron Nitride from N-Trimethylborazine (TMB) for Continuous CVD Coating of SiBNC Fibers (pages 249–255)

      Yaping Ye, Uta Graupner and Reinhard Krüger

      Article first published online: 5 SEP 2012 | DOI: 10.1002/cvde.201106969

      Hexagonal boron nitride is coated by atmospheric pressure chemical vapor deposition from the precursor N-trimethylborazine. In static experiments with silicon substrates, deposition kinetics and process parameters are determined. Perceptions from these experiments are used to continuously coat SiBNC fibers. Structural characterizations reveal hexagonal BN crystallites with basal plane stacks of 5 nm height, which are randomly oriented on the substrate.

    11. The Influence of H2O Content in Solvents {Water + Carbinol} and {Water + Ethanol} on the Deposition Mechanism of AZO Films Synthesized by Cold-wall AACVD (pages 256–262)

      Lin Zhao, Xiu Juan Qin, Guang Jie Shao and Na Wang

      Article first published online: 8 AUG 2012 | DOI: 10.1002/cvde.201206981

      For droplets that are generated ultrasonically from precursor solution using water and carbinol or water and ethanol as the solvent, the droplet weight increases nearly linearly with increasing surface tension. Initial droplet weight and surface tension act as the main factors influencing on the droplets' coagulation as well as the thickness and smoothness of the film synthesized by AACVD.

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