Intrinsic Nitrogen-doped CVD-grown TiO2 Thin Films from All-N-coordinated Ti Precursors for Photoelectrochemical Applications (pages 45–52)
Sun Ja Kim, Ke Xu, Harish Parala, Radim Beranek, Michal Bledowski, Kirill Sliozberg, Hans-Werner Becker, Detlef Rogalla, Davide Barreca, Chiara Maccato, Cinzia Sada, Wolfgang Schuhmann, Roland A. Fischer and Anjana Devi
Article first published online: 1 MAR 2013 | DOI: 10.1002/cvde.201206996
The intrinsic doping of TiO2 thin films with nitrogen by MOCVD and the investigation of the photo-electrochemical properties of the films are reported. N-doped anatase phase TiO2 thin films are grown on Si(100) and ITO substrates under specific processing conditions, using [Ti(NMe2)4] (1) and [Ti(NMe2)3(guan)] (2) (guan = N,N′-diisopropyl-2-dimethylamidoguanidinato) as precursors. The films grown from [Ti(NMe2)3(guan)] at 600 °C show relatively large surface roughness and lower bandgap related with high N content.