Chemical Vapor Deposition

Cover image for Vol. 19 Issue 1‐3

March 2013

Volume 19, Issue 1-3

Pages 1–73

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    1. Masthead: (Chem. Vap. Deposition 1–2–3/2013)

      Article first published online: 11 MAR 2013 | DOI: 10.1002/cvde.201390002

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    1. Contents: (Chem. Vap. Deposition 1–2–3/2013) (pages 1–3)

      Article first published online: 11 MAR 2013 | DOI: 10.1002/cvde.201390000

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    1. Modeling ALD Surface Reaction and Process Dynamics using Absolute Reaction Rate Theory (pages 4–14)

      Curtisha D. Travis and Raymond A. Adomaitis

      Article first published online: 18 FEB 2013 | DOI: 10.1002/cvde.201206985

      A physically based model of ALD surface reaction dynamics is developed and applied to alumina ALD. The time-dependent growth surface composition is modeled using transition state theory. A numerical procedure is developed to distinguish saturating growth per cycle from non-saturating conditions. The transition between the two regimes is studied as a function of pressure, exposure time, and temperature.

    2. Alumina and Yttria Powder and Yttria Coatings Made by Ultrasonic Spray Pyrolysis (pages 15–21)

      Alexandre Santos Abreu, Matthias Knoll, Judith Moosburger-Will, Armin Konrad, Reinhard Tidecks and Siegfried Horn

      Article first published online: 12 FEB 2013 | DOI: 10.1002/cvde.201206994

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      Ultrasonic spray pyrolysis is used to produce metal oxide powders (alumina, yttria, and mixtures of these) from nitrate precursors at temperatures below 500 °C. Moreover, yttria powder coatings on soda lime glass and fused silica substrates are generated. The as-prepared powders and coatings are examined by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD), and transmission electron microscopy (TEM).

    3. A Novel Manganese(II) MOCVD Precursor: Synthesis, Characterization, and Mass Transport Properties of Mn(hfa)2•tmeda (pages 22–28)

      Zaira Lipani, Maria R. Catalano, Patrizia Rossi, Paola Paoli and Graziella Malandrino

      Article first published online: 18 FEB 2013 | DOI: 10.1002/cvde.201207017

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      A non-hygroscopic, thermally stable, and volatile MnII complex is synthesized through coordination of the Lewis base tmeda to the Mn(hfa)2 moiety. Mn(hfa)2•tmeda represents the first example of a manganese(II) precursor that can be used in the liquid phase without decomposition, thus providing constant evaporation rates even for long deposition times. Its application to MOCVD produces hausmannite Mn3O4 phase films with a highly structured surface.

    4. Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD (pages 29–37)

      Hao Zhuang, Lei Zhang, Thorsten Staedler and Xin Jiang

      Article first published online: 18 FEB 2013 | DOI: 10.1002/cvde.201207011

      Low-temperature, hetero-epitaxial growth of 3C-SiC film on Si is achieved using microwave plasma CVD. Good epitaxial matching between SiC film and the Si substrate is obtained. No microvoids or channels are observed at the SiC/Si interface. The results show that MWCVD may be a potent approach for obtaining large-scale, high-quality, single-crystalline 3C-SiC films.

    5. New Liquid Precursors for the Metal-organic CVD of Gold Films (pages 38–44)

      Roman G. Parkhomenko, Asiya E. Turgambaeva, Natalia B. Morozova, Sergey V. Trubin, Vladislav V. Krisyuk and Igor K. Igumenov

      Article first published online: 12 FEB 2013 | DOI: 10.1002/cvde.201207022

      New liquid dialkyl dithiophosphate dimethylgold(III) complexes, Me2AuS2P(OCH3)2 (1) and Me2AuS2P(OC2H5)2 (2), exhibit good volatility and vaporization stability, and are stable in storage. Decomposition of the vapor of the compounds on a surface starts at T = 433 K (160 °C) for 1 and 423 K (150 °C) for 2. The thermolysis mechanism that is revealed and the composition of the films that are obtained enable the consideration of these compounds as precursors for gold MOCVD at T ≤ 423 K.

    6. Intrinsic Nitrogen-doped CVD-grown TiO2 Thin Films from All-N-coordinated Ti Precursors for Photoelectrochemical Applications (pages 45–52)

      Sun Ja Kim, Ke Xu, Harish Parala, Radim Beranek, Michal Bledowski, Kirill Sliozberg, Hans-Werner Becker, Detlef Rogalla, Davide Barreca, Chiara Maccato, Cinzia Sada, Wolfgang Schuhmann, Roland A. Fischer and Anjana Devi

      Article first published online: 1 MAR 2013 | DOI: 10.1002/cvde.201206996

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      The intrinsic doping of TiO2 thin films with nitrogen by MOCVD and the investigation of the photo-electrochemical properties of the films are reported. N-doped anatase phase TiO2 thin films are grown on Si(100) and ITO substrates under specific processing conditions, using [Ti(NMe2)4] (1) and [Ti(NMe2)3(guan)] (2) (guan = N,N′-diisopropyl-2-dimethylamidoguanidinato) as precursors. The films grown from [Ti(NMe2)3(guan)] at 600 °C show relatively large surface roughness and lower bandgap related with high N content.

    7. Parametric Study of Methane Catalytic CVD into Single-walled Carbon Nanotubes Using Spin-coated Iron Nanoparticles (pages 53–60)

      Choon-Ming Seah, Siang-Piao Chai, Satoshi Ichikawa and Abdul Rahman Mohamed

      Article first published online: 18 FEB 2013 | DOI: 10.1002/cvde.201207021

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      CNTs are grown on iron nanoparticles prepared by spin-coating a colloidal mixture using CVD. The density and morphology of CNT arrays depend on the reaction temperature, reaction period, and partial pressure of methane. The diameters of the CNTs are independent of these parameters.

    8. MOCVD of C-oriented Bi2Te3 Films on SiO2 Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium (pages 61–67)

      Sang-Woo Kang, Ki-Moon Jeon, Jae-Soo Shin, Je-Ran Chun, Young-Heon Kim, Sang Jun Lee and Ju-Young Yun

      Article first published online: 12 FEB 2013 | DOI: 10.1002/cvde.201207012

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      Bi2Te3 films can be deposited on a silicon dioxide substrate at temperatures as low as 300 °C using candidate precursors, Bi(Et)3 and Te(tBu)2, with relatively low decomposition temperatures for use in MOCVD. From the HRTEM image, quintuple layers with thickness of ≈1 nm are observed in the Bi2Te3 plate and atomic-scale steps appear at the surface.

    9. Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)5SiCl3 (pages 68–73)

      Jingchao Guan, Jianhui Jin, Xiao Chen, Bingsen Zhang, Dangsheng Su and Changhai Liang

      Article first published online: 19 FEB 2013 | DOI: 10.1002/cvde.201207009

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      Uniformly dispersed MnSi nanoparticles on silica with a size of about 5–6 nm are synthesized by MOCVD of Mn(CO)5SiCl3 as a single-source precursor. The formation mechanism of MnSi from Mn(CO)5SiCl3 adsorbed on silica in H2 through elimination of carbonyl groups and dissociation of SiCl bonds is proven using in-situ FTIR spectroscopy.

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