Chemical Vapor Deposition

Cover image for Vol. 19 Issue 7-8-9

September 2013

Volume 19, Issue 7-8-9

Pages 220–294

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. You have free access to this content
      Cover image from S. Bräse, M. Seipenbusch and co-workers (Chem. Vap. Deposition 2013, 19, 274)

      Article first published online: 14 SEP 2013 | DOI: 10.1002/cvde.201377891

      Thumbnail image of graphical abstract

      Very homogenously dispersed Pt nanoparticles with a median size of 2.2nm on SiO2 spheres produced by CVS/MOCVD using a novel PtMe2(Et-COD) precursor are shown.

  2. Masthead

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Chem. Vap. Deposition (7–8–9/2013) (page 220)

      Article first published online: 14 SEP 2013 | DOI: 10.1002/cvde.201377892

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Chem. Vap. Deposition (7–8–9/2013) (pages 221–223)

      Article first published online: 14 SEP 2013 | DOI: 10.1002/cvde.201377893

  4. Communication

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. Water Vapor Treatment for Decreasing the Adhesion between Vertically Aligned Carbon Nanotubes and the Growth Substrate (pages 224–227)

      Yagang Yao, Kyoung-Sik Moon, Andrew McNamara and Ching-ping Wong

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201304319

      Thumbnail image of graphical abstract

      A simple way to decrease the adhesion between vertically aligned carbon nanotubes and the growth substrate is reported. The decreased adhesion helps the transfer of VACNTs grown from the BM CVD system onto specific substrates. Using this method, a CNT-based thermal interface material, which is a Si/CNT/Cu tri-layer structure, is made. A low thermal resistance of ∼10.5 mm2 K W−1 is achieved.

  5. Full Papers

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Communication
    6. Full Papers
    1. The Synthesis of Superparamagnetic Cobalt Nanoparticles Encapsulated in Carbon Through High-pressure CVD (pages 228–234)

      Tony Jaumann, E. M. M. Ibrahim, Silke Hampel, Diana Maier, Albrecht Leonhardt and Bernd Büchner

      Article first published online: 27 MAR 2013 | DOI: 10.1002/cvde.201207020

      The production of stable and super-paramagnetic cobalt nanoparticles embedded in carbon through high-pressure CVD is presented. A full characterization of morphology and magnetic properties is presented and the effect of synthesis parameters on the cobalt-carbon nanocomposite is studied. The results can help to tailor the properties of stable magnetic nanostructures.

    2. Single-Source Precursor-Based Deposition of Sb2Te3 Films by MOCVD** (pages 235–241)

      Georg Bendt, Stephan Schulz, Sebastian Zastrow and Kornelius Nielsch

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201207044

      Thumbnail image of graphical abstract

      (Et2Sb)2Te is a volatile, single-source-precursor for the MOCVD of Sb2Te3 films at low temperatures. The growth rates increase from 600 nm h−1 at 200 °C with increasing substrate temperature. The Sb2Te3 films consist of randomly oriented hexagonal nanoplates with a diameter of more than 2 µm. In addition, Seebeck coefficients of up to 160 µV K−1 demonstrate the high quality and low carrier density of the Sb2Te3 films.

    3. a-SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors** (pages 242–250)

      Aleksander M. Wrobel, Agnieszka Walkiewicz-Pietrzykowska, Pawel Uznanski and Bartosz Glebocki

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201207046

      a-SiC:H films deposited from a diethylsilane precursor at various substrate temperatures (30–350 °C) are characterized in terms of their chemical structure, surface morphology, density, refractive index, and extinction coefficient. The relationships between the film properties and structural parameter derived from the IR spectra and related to the number of SiC bonds in the film network are determined. The present results are compared with those reported for the films formed from triethylsilane.

    4. Deposition of Thin Copper Layers using Copper(II) Carboxylate Complexes with tert-Butylamine as New CVD Precursors (pages 251–259)

      Piotr Piszczek, Iwona Barbara Szymańska, Ewa Talik and Janusz Heimann

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201207049

      Thumbnail image of graphical abstract

      Volatile properties of copper(II) complexes ([Cu2(tBuNH2)2(μ-O2CR)4] (R = CnF2n+1, n = 1–6)) are discussed. Results of CVD experiments in the range 673–743 K prove their usefulness in the production of copper layers on Si(111), Si-SiO2, titanium, and Ti-TiO2 substrates. The AFM image shows the coalescence effect of copper nanograins, which leads to the formation of densely packed metallic layers.

    5. A Langmuir-Kinetic Model for CVD Growth from Chemical Precursors (pages 260–266)

      Rishi Raj and Susan P. Krumdieck

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201207024

      A time-dependent decomposition parameter is added to the classical Langmuir adsorption model to develop a model for CVD growth kinetics. The results, presented in the form of a processing map, separate into three regimes: low temperature, intermediate temperature, and high temperature. The middle regime, which is prominent at low impingement rates and intermediate temperatures, is expected to promote step-coverage.

    6. Reactive Mass Transport during the Aluminization of Rene-80 (pages 267–273)

      Bartek Wierzba, Katarzyna Tkacz-Śmiech and Andrzej Nowotnik

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201307013

      Thumbnail image of graphical abstract

      The problem of designing the technology and the layers formed during aluminization remains open. In this work we consider mass transport in the multicomponent system, in which the layers of multiphase and various phases can grow. Hence the diffusion path, which in the ternary phase diagram connects terminal compositions of the diffusion couple, can be calculated. When the isothermal section of the phase diagram is projected onto the composition triangle, then the fields crossed by the diffusion path can be indicated.

    7. Synthesis of Pt/SiO2 Catalyst Nanoparticles from a Continuous Aerosol Process using Novel Cyclo-octadienylplatinum Precursors (pages 274–283)

      Matthias Faust, Mirja Enders, Kun Gao, Linus Reichenbach, Thierry Muller, Wolfgang Gerlinger, Bernd Sachweh, Gerhard Kasper, Michael Bruns, Stefan Bräse and Martin Seipenbusch

      Article first published online: 12 AUG 2013 | DOI: 10.1002/cvde.201207038

      Investigations on the MOCVD) of platinum nanoparticles on spherical, chemical vapor synthesis (CVS)-produced SiO2 substrates are discussed. Commercially available methylcyclopentadienyl trimethyl platinum (MeCpPtMe3) (1), and three newly synthesized cyclooctadienyl platinum precursors [PtMe2(R-COD)], where R = Et (2a), nBu (2b), and iBu (2c) are synthesized, characterized, and tested during a continuous CVD/CVS process.

    8. Deposition of Diamond onto a Titanium Substrate using a Molybdenum Intermediate Layer (pages 284–289)

      Mubarak Ali, Mustafa Ürgen and Ishtiaq A. Qazi

      Article first published online: 7 AUG 2013 | DOI: 10.1002/cvde.201307063

      Realizing that certain industrial applications may require diamond films to be deposited over a surface that has the hardness of titanium but has a much higher melting point, the deposition of diamond films over titanium with a pre-deposited thin film of molybdenum is investigated for the first time. Diamond films exhibit cubic morphology. Films deposited over metallic substrates show higher stress compared to those over silicon, and metallic elements are diffused.

    9. Dependence of Si/SnO2 Heterojunction Properties on Growth Temperature and Type of Silicon** (pages 290–294)

      M. Maleki and Seyed M. Rozati

      Article first published online: 14 SEP 2013 | DOI: 10.1002/cvde.201207014

      The effects of substrate temperature and type of substrate on the properties of diodes are investigated. At high temperatures, samples grown on single-crystal Si have lower resistance than those grown on polycrystalline Si. From XRD patterns, samples grown at higher temperatures are seen to have better crystallinity. From I-V measurements, series resistance and barrier height decrease with increasing substrate temperature in polycrystalline Si/SnO2 diodes, while these parameters increase in single-crystal Si.

SEARCH

SEARCH BY CITATION