Chemical Vapor Deposition

Cover image for Vol. 20 Issue 4-5-6

June 2014

Volume 20, Issue 4-5-6

Pages 99–180

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Review
    6. Communication
    7. Full Papers
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      Cover image from C. Loho and co-workers (Chem. Vap. Deposition 2014, 20, 152)

      Version of Record online: 5 JUN 2014 | DOI: 10.1002/cvde.201474561

      Thumbnail image of graphical abstract

      The cover image illustrates CO2-laser flash evaporation of metal β-diketonate precursors, their decomposition, and the subsequent growth of a LiCoO2 thin film. The use of CO2-laser flash evaporation in a CVD process is a novel approach for the delivery of solid precursors with low volatility.

  2. Masthead

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Review
    6. Communication
    7. Full Papers
    1. Chem. Vap. Deposition (4–5–6/2014)

      Version of Record online: 5 JUN 2014 | DOI: 10.1002/cvde.201474562

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Review
    6. Communication
    7. Full Papers
    1. You have free access to this content
  4. Review

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Review
    6. Communication
    7. Full Papers
    1. Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition (pages 103–111)

      Jiao Wang, Gaoshan Huang and Yongfeng Mei

      Version of Record online: 5 JUN 2014 | DOI: 10.1002/cvde.201300054

      Thumbnail image of graphical abstract

      Various optical microcavities, such as photonic crystals, opals, and tubular microcavities, are illustrated to demonstrate their development under the assistance of atomic layer deposition (ALD) technology. The ALD process presents several advantages for the fabrication and modification of optical nano-/microdevices because of its atomic level thickness fine-tuning and perfect coating conformability in complex 3D structures.

  5. Communication

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Review
    6. Communication
    7. Full Papers
    1. Thin a-SiC:H Films Formed by Remote Hydrogen Microwave Plasma CVD using Dimethylsilane and Trimethylsilane Precursors (pages 112–117)

      Aleksander M. Wróbel, Agnieszka Walkiewicz-Pietrzykowska and Pawel Uznanski

      Version of Record online: 29 APR 2014 | DOI: 10.1002/cvde.201304325

  6. Full Papers

    1. Top of page
    2. Cover Picture
    3. Masthead
    4. Contents
    5. Review
    6. Communication
    7. Full Papers
    1. Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates (pages 118–124)

      Kyung-Hyun Choi, Kamran Ali, Chang Young Kim and Nauman Malik Muhammad

      Version of Record online: 21 FEB 2014 | DOI: 10.1002/cvde.201307082

      Thumbnail image of graphical abstract

      Al2O3 films are deposited on PEN substrates through ALD at temperatures as low as 35 °C using Al(CH3)3 and H2O as precursors. The growth characteristics are systematically investigated under various deposition temperatures, Al(CH3)3 and H2O purge and exposure times, and number of ALD cycles. The surface morphology, chemical analysis, electrical, and optical properties of the films reveal their promise as feasible protective and insulating layers in electrical device applications.

    2. The Direct Synthesis of Graphene on a Gallium Nitride Substrate (pages 125–129)

      Xuli Ding, Hong Sun and Xiaofeng Gu

      Version of Record online: 14 MAR 2014 | DOI: 10.1002/cvde.201307085

      Thumbnail image of graphical abstract

      Experimental results of the direct deposition of graphene films on gallium nitride (GaN)/sapphire substrates by catalyst-free, atmospheric pressure CVD are presented. The quality and thickness of the synthesized samples can be controlled by the growth conditions. The Raman mappings are reported. The measured optical transparency and electrical transport show promising potential for the application of graphene/GaN compounds in microelectronics and optoelectronics.

    3. The ALD-MLD Growth of a ZnO-Zincone Heterostructure (pages 130–137)

      Devika Choudhury and Shaibal K. Sarkar

      Version of Record online: 24 FEB 2014 | DOI: 10.1002/cvde.201307092

      Thumbnail image of graphical abstract

      A combination of atomic layer deposition and molecular layer deposition is used for the growth of a mixed inorganic/organic multilayer film of zinc oxide and zincone. Full characterization of the deposited multilayer film is presented, and various tunable properties of the material are studied. The formation of ZnO nanosheets on selective etching of the organic layer is achieved.

    4. Preserving Particle Characteristics at Increasing Production Rate of ZnO Nanoparticles by Chemical Vapor Synthesis (pages 138–145)

      Carolin Schilling and Markus Winterer

      Version of Record online: 24 FEB 2014 | DOI: 10.1002/cvde.201307094

      ZnO nanoparticles are synthesized by chemical vapor synthesis (CVS) via different possible routes to increase the production rate, namely by increasing the total pressure, the precursor concentration, the reactor diameter, and alternatively by parallelization through the use of parallel reactors. The influence on the particle characteristics are investigated. It is found that only the use of parallel tubes allows the increase of the production rate while preserving particle characteristics.

    5. CVD of Pt(C5H9)2 to Synthesize Highly Dispersed Pt/SBA-15 Catalysts for Hydrogenation of Chloronitrobenzene (pages 146–151)

      Manman Jiang, Mingming Zhang, Chuang Li, Christopher T. Williams and Changhai Liang

      Version of Record online: 2 MAY 2014 | DOI: 10.1002/cvde.201307091

      Thumbnail image of graphical abstract

      Pt(C5H9)2 is synthesized by the reaction of dichloro(1,5-cyclooctadiene)platinum with pent-4-en-1-ylmagnesium bromide under inert atmosphere, and is used as a metal-organic precursor. Highly dispersed Pt/SBA-15 catalysts, with an average particle size of 4.6 ± 1.1 nm, are successfully prepared by the MOCVD of Pt(C5H9)2. These catalysts show an efficient activity for selective hydrogenation of o-CNB.

    6. CO2-Laser Flash Evaporation as Novel CVD Precursor Delivery System for Functional Thin Film Growth (pages 152–160)

      Christoph Loho, Azad J. Darbandi, Ruzica Djenadic, Oliver Clemens and Horst Hahn

      Version of Record online: 16 MAY 2014 | DOI: 10.1002/cvde.201307089

      A novel approach to deliver solid precursors with low volatility in a CVD process is introduced. Using CO2-laser flash evaporation of metal β-diketonates, thin films of LiCoO2 are grown under various processing conditions. It is shown that this CO2-laser-assisted CVD method enables the highly controlled growth of a multicomponent thin film with desired composition and stoichiometry over the entire growth period.

    7. Pulsed PECVD for Low-temperature Growth of Vertically Aligned Carbon Nanotubes (pages 161–169)

      Mahananda Baro, Dolly Gogoi, Arup Ratan Pal, Nirab Chandra Adhikary, Heremba Bailung and Joyanti Chutia

      Version of Record online: 30 APR 2014 | DOI: 10.1002/cvde.201307093

      Pulsed plasma-enhanced (PE)CVD is used for the growth of vertically aligned multiwall carbon nanotubes (CNTs) at a low temperature range of 350–490 °C. The effect of Ni catalyst film morphology on low temperature growth of CNTs by pulsed PECVD is studied and possible reasons for the better performance of pulsed plasma in respect of growth rate and low temperature growth are discussed.

    8. Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique (pages 170–176)

      Maxim S. Polyakov, Aram M. Badalyan, Vasiliy V. Kaichev and Igor K. Igumenov

      Version of Record online: 8 MAY 2014 | DOI: 10.1002/cvde.201307078

      Combined synthesis-transport (CST) is a recently developed technique for modifying well-known MOCVD and PECVD technology. The films formed represent metallic layers with a smooth uniform surface, crystalline structure, and low thickness. The effect of plasma activation results in a two-fold decrease in the average grain size as compared to that inherent in thermal activation ceteris paribus. A general mechanism for CST is suggested.

    9. Hardware Design Optimization and Process Control for a Low Friction Coefficient Substrate and Film: A Case Study in the Semiconductor Industry (pages 177–180)

      Francesco Fumagalli, Sara Marelli, Domenico Angilletta, Stefano Capellini and Marcello Sgroi

      Version of Record online: 29 APR 2014 | DOI: 10.1002/cvde.201307098

      Thumbnail image of graphical abstract

      In the semiconductor industry, the use of amorphous carbon film, produced using PECVD, together with DSP silicon wafer substrates, may be a critical condition for large-scale production because of the possible occurrence of wafer sliding. As shown, under certain circumstances a customization of the deposition tool is the only solution.

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