Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

July 1996

Volume 2, Issue 4

Pages fmi–fmi, 125–162

  1. Masthead

    1. Top of page
    2. Masthead
    3. Articles
    4. Communications
    5. Full Papers
    6. CVD Forum
    1. Masthead (page fmi)

      Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020401

  2. Articles

    1. Top of page
    2. Masthead
    3. Articles
    4. Communications
    5. Full Papers
    6. CVD Forum
    1. Silica Monolayer Solid-Acid Catalyst Prepared by CVD (pages 125–134)

      Dr. Naonobu Katada and Prof. Miki Niwa

      Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020402

      For the design of novel acid catalysts it is important to understand the principles of the generation of acidity. However, the origin of this acidity is unclear because the mixed solid-acid usually possesses a complicated structure leading to different types of sites. The CVD of silica is being used on high surface area basic oxides to provide model compounds to elucidate the formation and functioning of acid catalysts. This paper reviews these studies and also shows how novel heat resistant catalysts can be obtained.

  3. Communications

    1. Top of page
    2. Masthead
    3. Articles
    4. Communications
    5. Full Papers
    6. CVD Forum
    1. Cd(SeRf)2 (Rf = 2,4,6-(CF3)3C6H2)—An improved CVD single source precursor for II–VI Semiconductors: Synthesis, growth and characterization (pages 135–139)

      Hyung S. Park, Dr. Mohamed Mokhtari and Prof. Herbert W. Roesky

      Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020403

      CdSe is one of the most promising photoelectrochemical materials. A common problem of the CVD of multicomponent systems is obtaining the appropriate stoichiometry in the gas phase. This can be overcome by using single source precursors containing the required elements. This communication reports on an improved precursor of this type. The figure shows an AFM image of a layer of CdSe on silica. Conclusions are drawn about the growth mechanism.

  4. Full Papers

    1. Top of page
    2. Masthead
    3. Articles
    4. Communications
    5. Full Papers
    6. CVD Forum
    1. Kinetics of CVD of stoichiometric and Si-excess SiC in the system MTS/H2 at medium decomposition of MTS (pages 141–146)

      Dr. Andrei Josiek and Dr. Francis Langlais

      Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020404

      SiC is an important material for mechanical and microelectronic applications. A commonly used precursor is methyltrichlorosilane (MTS), but little has been reported previously on the role of the degree of decomposition of the MTS on growth kinetics. This paper shows that under conditions of medium decomposition (10-90%) two regions of kinetics are found with a sharp transition between them for the type of film obtained. A model which accounts for this sharp changeover is presented.

    2. Preparation and structural characterization of, and chemical vapor deposition studies with, certain yttrium tris(β-diketonate) compounds (pages 149–161)

      Henry A. Luten, Prof. William S. Rees Jr and Virgil L. Goedken

      Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020405

      A wide variety of advanced materials contain yttrium. CVD has numerous advantages over alternative methods for depositing thin, yttrium containing films, but requires suitable precursors. An extensive investigation of several γ-diketonate precursors, for example as shown in the accompanying structure, is presented here, together with a discussion of their volatility in terms of ligand symmetry. Films grown from the precursors have been characterized as well.

  5. CVD Forum

    1. Top of page
    2. Masthead
    3. Articles
    4. Communications
    5. Full Papers
    6. CVD Forum
    1. CVD Forum (page 162)

      Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020406

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