Metal-organic vapor phase epitaxial growth of cubic Gallium selenide, Ga2Se3 (pages 185–189)
Dr. Tat Lin Ng, Dr. Nicolas Maung, Dr. Guanghan Fan, Dr. Ian B. Poole, Prof. John O. Williams, Dr. Andrew C. Wright, Dr. Douglas F. Foster and David J. Cole-Hamilton
Article first published online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020507
The first in-depth study of the MOVPE of Ga2Se3 is reported. It is found that trimethylgallium (TMGa) pre-reacts with the hydride H2Se in the gas phase to yield films which are only partially epitaxial and that combination of TMGa with ditertiarybutylselenide produces films of the best crystalline quality under steady state flow conditions. The Figure shows a cross-sectional bright field image of epitaxial cubic Ga2Se3 on Gap.