Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

November 1996

Volume 2, Issue 6

Pages fmi–fmi, 222–298

  1. Masthead

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. Masthead (page fmi)

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020601

  2. Miscellaneous

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. Announcement and call for papers (page 222)

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020602

  3. Articles

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. Gas-Phase Pyrolysis Mechanisms in Organometallic CVD (pages 223–233)

      Prof. Douglas K. Russell

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020603

      An overall CVD process is very complex, with contributions from steps which include gas-phase reactions, mass transport, surface-mediated chemistry, and nucleation. Traditional empirical optimization of growth parameters is now being replaced by more rational approaches to understanding the contributions of individual steps to the overall process. Mechanisms of gas-phase pyrolysis of organometallic CVD precursors and their influences on deposition are reviewed here. Examples given show that spectroscopic techniques can provide valuable clues to factors which affect layer quality.

  4. Communications

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. Epitaxial growth of Bi2O2.33 by halide Cvd (pages 235–238)

      Dr. Mikael Schuisky and Dr. Anders Hårsta

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020604

      Bismuth oxide is an interesting dielectric material with potential applications for optical coatings. MIS capacitors, and microwave integrated circuits. CVD growth has a number of advantages over other deposition techniques, e.g., precise control of oxygen activity, microstructure, and texture. The study presented here shows how this can be achieved for epitaxial Bi2O2.33 films grown on SrTiO3 and MgO (see Figure) using halide CVD with Bil3 as the bismuth source.

    2. Pure and mixed phase Bi2O3 thin films obtained by metal organic chemical vapor deposition (pages 238–242)

      Prof. Giuliano Bandoli, Dr. Davide Barreca, Dr. Enrico Brescacin, Dr. Gian A. Rizzi and Prof. Eugenio Tondello

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020605

    3. Low-temperature chemical vapor deposition of indium sulfide thin films using a novel single-source indium thiocarboxylate compound as precursor (pages 242–244)

      Dr. Guihua Shang, Dr. Klaus Kunze, Prof. Mark J. Hampden-Smith and Dr. Eileen N. Duesler

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020606

      The optoelectronic properties of gallium and indium chalcogenides have attracted considerable attention in recent years. This paper describes the synthesis and characterization of the first monomeric indium thiocarboxylate CVD precursor, with the molecular structure shown in the Figure. This compound has been successfully used to grow high purity, uniform, crystalline β-In2S3 by aerosol-assisted CVD at the lowest temperature (210°C) yet reported.

    4. The synthesis and thermal evaluation of a novel cerium precursor to grow thick ceria films by metal-organic chemical vapor deposition (MOCVD) (pages 244–247)

      Dr. John McAleese, Dr. Jawwad A. Darr and Prof. Brian C. H. Steele

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020607

      Ce1-xGdxO2-x/2 as a thick electrolyte in solid oxide fuel cells should result in high current densities and acceptable ohmic losses at 500°C. It would be interesting to be able to grow such an electrolyte by MOCVD, and in this work the synthesis and thermal evaluation of a novel, air-stable, liquid cerium precursor [{Ce(fod)3}2(tetraglyme)] for the MOCVD of the cerium component of the electrolyte is reported. Growth of good quality, thick, crystalline ceria films from the precursor has been demonstrated for the first time.

    5. Thermodynamic approach to the OMCVD of titanium carbide from titanocene dichloride (pages 247–251)

      Dr. Joël Slifirski and Prof. Francis Teyssandier

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020608

      The deposition of TiC on steel at low temperatures is desirable. It can be achieved using readily decomposable precursor molecules, e.g., organometallics. However, this often results in excess carbon in a coating—the Figure shows the effect of precursor composition on the temperature of occurrence of excess carbon—and a deterioration in mechanical properties. This paper examines the theoretical influences of temperature, pressure, and hydrogen dilution on equilibrium carbon incorporation.

  5. Full Paper

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. Anisotropic materials prepared by OCVD: Organic molecular conductors (pages 251–253)

      Jaume Caro, Susana Garelik and Dr. Albert Figueras

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020609

      Organic compounds may play useful roles in future electronic devices. The preparation of thin films of molecular organic conductors will be an important step towards the development of organic-based systems. This article reports on the preparation and characterization of TTF-TCNQ layers grown by organic CVD (OCVD), which is based on classical thermal CVD. Highly oriented layers are deposited on glass substrates and the electrical properties are similar to those previously reported for films prepared under rather more complex high vacuum conditions.

  6. Full Papers

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. Analysis and modeling of SIPOS deposition in a hot wall tubular reactor. Part I: Review of previous work and experimental study (pages 255–263)

      Dr. Francine Fayolle, Dr. Jean-Pierre Couderc and Dr. Patrick Duverneuil

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020610

      LPCVD reactors, as illustrated in the Figure, are widely used in semiconductor manufacture. Modeling of these reactors has previously been restricted to relatively simple processes such as polysilicon deposition. This paper now examines the deposition of SIPOS (SiOx) by reviewing previous work, by identifying possible homogeneous and heterogeneous reactions, and by presenting new experimental results to complement existing data.

    2. Analysis and modeling of SIPOS deposition in a hot wall tubular reactor. Part II: Modeling of SIPOS deposition (pages 265–275)

      Dr. Francine Fayolle, Dr. Jean-Pierre Couderc and Dr. Patrick Duverneuil

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020611

      A full theoretical model of SIPOS deposition is presented, building on the preceding article. A code previously developed to treat the deposition of undoped and doped polysilicon has been extended to the more complex case of SIPOS deposition from SiH4 and N2O. The model is in good agreement with experiment at the center of a wafer, but is only qualitatively correct at the wafer periphery. Even with these limitations the code gives a satisfactory simulation of the influence of temperature and pressure on the deposition process and provides a deeper insight into the deposition mechanism.

    3. Low temperature deposition of AIN films by an alternate supply of trimethyl aluminum and ammonia (pages 277–283)

      Diana Riihelä, Dr. Mikko Ritala, Raija Matero, Prof. Markku Leskelä, Janne Jokinen and Dr. Pekka Haussalo

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020612

      Aluminum nitride is a wide band gap material with many desirable properties, including having a thermal expansion coefficient well matched to those of Si and GaAs. A common problem for the CVD of aluminum nitride is the need for high temperatures, typically above 700°C. It is shown in this work that, by using an alternate supply of trimethyl aluminum (TMA) and NH3 in the mode of atomic layer epitaxy (ALE), good quality, uniform films can be deposited at temperatures as low as 325–425°C. The impurities in the films have also been investigated.

    4. Conversion of tetraethoxysilane (TEOS) to silica film-forming precursors in atomic oxygen-induced chemical vapor deposition (pages 285–291)

      Aleksander M. Wróbel, Agnieszka Walkiewicz-Pietrzykowska, Marek Stasiak and Dr. Józef Kulpiúski

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020613

      Fabrication of thin films of silica from TEOS (see Figure) by CVD is one of the most important processes in VLSI technology. Remote plasma enhanced CVD (RPECVD) is particularly suitable, but chemical understanding of RPECVD processes is limited. The study of the conversion products of TEOS in atomic oxygen-induced RPECVD presented here suggests that diethoxysilanone plays a predominant role in silica film growth.

  7. Research News

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. High temperature superconductors and related topics (pages 293–296)

      Prof. Tobin J. Marks and Prof. Michael L. Hitchman

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020614

      MOCVD offers many potential attractions for high temperature superconductor (HTS) film formation and device fabrication. In June 1996 the Third International Workshop on MOCVD of High Temperature Superconductors and Related topics was held in Strasbourg, France, within the E-MRS Spring Meeting. The sessions of the Workshop are briefly described, including very short reports of the lectures, and a list of the titles of posters is given. The conclusions and recommendations of the panel discussion are summarized.

  8. CVD Forum

    1. Top of page
    2. Masthead
    3. Miscellaneous
    4. Articles
    5. Communications
    6. Full Paper
    7. Full Papers
    8. Research News
    9. CVD Forum
    1. CVD Forum (page 298)

      Version of Record online: 4 OCT 2004 | DOI: 10.1002/cvde.19960020615

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