Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

June 1997

Volume 3, Issue 3

Pages fmi–fmi, 111–146

  1. Masthead

    1. Top of page
    2. Masthead
    3. Full Paper
    4. Book Review
    1. Masthead (page fmi)

      Version of Record online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030301

  2. Full Paper

    1. Top of page
    2. Masthead
    3. Full Paper
    4. Book Review
    1. Remote Plasma-Enhanced CVD of Fluorinated Silicon Nitride Films (pages 111–117)

      Prof. Sergei E. Alexandrov and Michael L. Hitchman

      Version of Record online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030302

      Improved dielectric properties of plasma-deposited silicon nitride are achieved by introducing NF3 into the remote plasma region. This leads to fluorinated films with the structure of the nitride, but with the total bonded hydrogen decreased, as shown by the fall with increased NF3 flow from 1 sccm to 3 scm of the intensity of the Si[BOND]Hi peak at ca. 2250 cm−1. Such films could be of interest for device applications.

    2. Microwave Plasma CVD in the System Si-C-H-Ar: Effect of Process Parameters (pages 119–128)

      Dr. Stephane Scordo, Prof. Michel Ducarroir, Dr. René Berjoan and Dr. Jean Louis Jauberteau

      Version of Record online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030303

      The decoupling of the effects of process parameters is important in any CVD process. In this study of the effects of parameters such as temperature, gas flow rate, power, and pressure on composition and deposition rate of silicon carbide films from TMS, the substrate temperature and plasma parameters are separately adjustable in the microwave device. This allows, for example, a correlation of plasma power with electron temperature and electron density, as determined by electrostatic double probe measurements.

    3. A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction (pages 129–135)

      M. Shahidul Haque, Prof. Hameed A. Naseem, Prof. Ajay P. Malshe and Prof. William D. Brown

      Version of Record online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030304

      Diamond films of relatively low residual stress have been deposited on silicon substrates using microwave PCVD. In general, 〈220〉 oriented films exhibited tensile macrostress and 〈111〉 films were in compression. The microstress was observed to be tensile for all samples. The 〈111〉 oriented films (see Figure) grown at low methane concentration showed the lower macro- and microstress.

    4. MOCVD Route to Chromium Carbonitride Thin Films Using Cr(NEt2)4 as Single-Source Precursor: Growth and Mechanism (pages 137–143)

      Dr. Franco Ossola and Dr. Francis Maury

      Version of Record online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030305

      A single-source precursor has been used to deposit chromium carbonitride by MOCVD for the first time. As-deposited films from the precursor chromium(IV) dialkylamide (Cr(NEt2)4) are amorphous and crystallize on annealing to form an orthorhombic ternary phase. They exhibit a high hardness and their resistivity decreases with increasing growth temperature. Quantitative 1H NMR analysis of by-products of the MOCVD suggests that most of the NEt2 ligands are removed by a stepwise mechanism.

  3. Book Review

    1. Top of page
    2. Masthead
    3. Full Paper
    4. Book Review