Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

November 1997

Volume 3, Issue 6

Pages fmi–fmi, 299–317

  1. Masthead

    1. Top of page
    2. Masthead
    3. Communications
    4. Full Paper
    1. Masthead (page fmi)

      Article first published online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030601

  2. Communications

    1. Top of page
    2. Masthead
    3. Communications
    4. Full Paper
    1. Pyrolytic CVD of poly(organosiloxane) thin films (pages 299–301)

      Dr. Michael C. Kwan and Prof. Karen K. Gleason

      Article first published online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030602

      Communication: Silicone films have a wide range of applications. All efforts to date to deposit them have concentrated on PECVD, but ths technique has the problem of introducing defects into the layers as a result of UV irradiation and ion bombardment. A pyrolytic process has te possibility of depositing layers with a lower density of dangling bonds. This paper presents rate and with a similar structure to that of poly(dimethylsiloxane).

    2. Selective production of carbon structures by non-equilibrium techniques (pages 301–306)

      Prof. Maria L. Terranova, Dr. Marco Rossi, Dr. Vito Sessa and Prof. Adriano Alippi

      Article first published online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030603

      Communication: Specific carbon structures, including diamond, can be selectively generated by CVD on the same substrate by controlling substrate surface preparation. This results from the use of process conditions far from equilibrium with a kinetic balance between the relative rates of competing mechanisms. The Figure shows the very different RHEED patterns obtained for two well-defined regions of the same substrate that have received different pre-treatments.

    3. Fabrication of polycrystalline LaAlO3 films on Si(100): An MOCVD application of the second-generation La(hfa)3 · diglyme precursor (pages 306–309)

      Dr. Graziella Malandrino, Amalia Frassica and Prof. Ignazio L. Fragalà

      Article first published online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030604

      Communication: The integration of high Tc superconductors with silicon requires buffer layers, which can act as diffusion barriers. One suitable material is LaAlO3 and this paper reports on a simple, low cost technique for preparating buffer layers on Si(100) substrates by MOCVD with new lanthanum and aluminum precursors. This effects of deposition temperature with either a one-step or two-step process are investigated. Both methods produce polycrystalline, shiny thin films with good adhesion properties.

  3. Full Paper

    1. Top of page
    2. Masthead
    3. Communications
    4. Full Paper
    1. CVD of CeO2-Doped Y2O3-Stabilized Zirconia onto Dense and Porous Substrates (pages 311–317)

      Mohammad H. Siadati, Prof. Timothy L. Ward, Jeffrey Martus, Paolina Atanasova, Changfeng Xia and Dr. Robert W. Schwartz

      Article first published online: 2 NOV 2004 | DOI: 10.1002/cvde.19970030605

      Full Paper: Mixed-conducting oxides on porous substrates are of interest for membrane, sensor, fuel cell, and battery applications. Aerosor, fuel cell, and battery applications. Aerosol-assisted CVD has been used to deposit films on dense silicon and porous alumina substrates. The effect of deposition parameters on film properties, including morphology, is presented. The Figure shows the columnar structure obtained with porous substrates.

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