The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices (pages 87–92)
P.A. Lane, M.J. Crosbie, P.J. Wright, P.P. Donohue, P.J. Hirst, C.L. Reeves, C.J. Anthony, J.C. Jones, M.A. Todd and D.J. Williams
Version of Record online: 20 MAR 2003 | DOI: 10.1002/cvde.200390007
Lanthanum nickelate (LNO) films are deposited on Si/SiO2 and sapphire substrates at 630 °C by liquid delivery MOCVD using La(thd)3 and Ni(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptadionato) dissolved in tetrahydrofuran and heptane. The as grown layers are highly crystalline (see Figure) and highly oriented on Si/SiO2 substrates. Electrical resistivity is found to be dependent on La:Ni ratio, substrate and annealing conditions with a minimum value of 300 μΩ cm for LNO on (0001) sapphire.