J. Goswami, C.-G. Wang, W. Cao and S.K. Dey
Platinum thin films are grown on thermal-SiO2/Si at 350 °C from (CH3)3-CH3CpPt and Pt(acac)2. Films deposited from the first precursor show an orientation ratio of [I(111)/I(200) = 270], a large grain size of 50 nm, and poor conformality of 35–45 %, while those produced from Pt(acac)2 show [I(111)/I(200) = 40], finer grain structure, and excellent conformality of 85–95 % (see Figure). Film resistivity exhibits values of 23.6 and 27.6 μΩ cm.