Chemical Vapor Deposition

Cover image for Chemical Vapor Deposition

August, 2003

Volume 9, Issue 4

Pages 175–222

    1. CVD on Bacteria Networks (pages 179–180)

      M. Pons, F. Baillet, P. Gadelle and M.-C. Schouler

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200304150

      A novel CVD submicrometer patterning technique of metals using a bacteria network is described and the suitability of the process to produce metallic islands which can catalyze the deposition of carbon nanotubes is demonstrated. The process for pattering, starting from the deposition of bacteria containing metal oxides, is shown in the Figure.

    2. Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H2–BF3–N2–Ar–He Gas System (pages 181–186)

      C.-Y. Chan, W. Zhang, K.-M. Chan, I. Bello and S.-T. Lee

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200306241

      Boron nitride films of high crystallinity and cubic phase purity have been synthesized over large areas using electron–cyclotron resonance microwave plasma and fluorine chemistry provided by a complex H2–BF3–N2–Ar–He gas mixture. Each component of the mixture is optimized in accord with its function and this has paved the way for the preparation of thick cubic boron nitride films at low bias voltage of –30 V. Micrometer-thick films exhibiting columnar growth are obtained and the effect of ion bombardment, which proved to be indispensable for the growth, on the phase purity and crystallinity of cBN films is investigated.

    3. The Characterization of LiMn2O4 Thin Film Cathode for Lithium Rechargeable Microbattery Prepared by Liquid Source Misted Chemical Deposition (pages 187–192)

      K.W. Kim, M.R. Kim, S.-W. Lee, K.-S. Han and S.I. Woo

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200306237

      Homogeneous LiMn2O4 films are produced by LSMCD (liquid source misted chemical deposition). Sectional SEM analysis on as deposited films show no discontinuation (see Figure). Annealing the deposit at 800 °C produces films exhibiting high initial discharge capacity of 62.5 μA h cm–2 μm–1 and good capacity retention of 92% over 100 cycles.

    4. CVD of Al2O3 Thin Films Using Aluminum Tri-isopropoxide (pages 194–198)

      S. Blittersdorf, N. Bahlawane, K. Kohse-Höinghaus, B. Atakan and J. Müller

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200306248

      α-Alumina has been deposited on stainless steel and nickel based alloy from aluminum tri-isopropoxide (ATI) using a cold-wall CVD reactor. The effects of the substrate temperature (300–1080 °C) and the total pressure (50–250 mbar) on the growth rate and morphology of the deposited films are investigated. XRD analysis indicates corundum alumina deposition at substrate temperatures above 1000 °C whereas γ-alumina is deposited at low temperatures. Precursor depletion was prevented by using high gas velocity, low pressure, and low ATI concentration.

    5. Nucleation and Growth of Nanophasic CeO2 Thin Films by Plasma-Enhanced CVD (pages 199–206)

      D. Barreca, A. Gasparotto, E. Tondello, C. Sada, S. Polizzi and A. Benedetti

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200306247

      A study of the initial nucleation stages of PECVD CeO2 thin films has been conducted. Ceria films are deposited in the temperature range 150–300 °C on SiO2 and Si(100) from Ce(dpm)4 in Ar and Ar–O2 plasmas. HRTEM analyses of films deposited on Si(100) indicate homogeneously distributed 5 nm diameter spherical aggregates (see Figure). The CeIV content in the films is found to be tunable by oxygen partial pressure and substrate temperature.

    6. ZrO2 Thin Films Grown on Silicon Substrates by Atomic Layer Deposition with Cp2Zr(CH3)2 and Water as Precursors (pages 207–212)

      M. Putkonen, J. Niinistö, K. Kukli, T. Sajavaara, M. Karppinen, H. Yamauchi and L. Niinistö

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200306254

      Zirconia thin films have been deposited onto Si(100) by ALD from Cp2Zr(CH3)2 and water in the temperature region 200–500 °C. Processing parameters optimized at 350 °C produce uniform films at a deposition rate of 0.43 Å (cycle)–1 with carbon and hydrogen impurity levels of < 0.1 at %. Films deposited at 300–400 °C are found to be crystalline with monoclinic (equation image11) as the preferred orientation. A breakdown field of 9.5 MV/cm is reported for a 6.9 nm thick ZrO2 film and leakage current density of 10–6 A/cm2 at 1 MV/cm field. In conclusion, the system is found to be a good alternative to existing zirconium halides and alkoxide systems.

    7. MOCVD of Platinum Films from (CH3)3CH3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity (pages 213–220)

      J. Goswami, C.-G. Wang, W. Cao and S.K. Dey

      Version of Record online: 18 AUG 2003 | DOI: 10.1002/cvde.200306240

      Platinum thin films are grown on thermal-SiO2/Si at 350 °C from (CH3)3-CH3CpPt and Pt(acac)2. Films deposited from the first precursor show an orientation ratio of [I(111)/I(200) = 270], a large grain size of 50 nm, and poor conformality of 35–45 %, while those produced from Pt(acac)2 show [I(111)/I(200) = 40], finer grain structure, and excellent conformality of 85–95 % (see Figure). Film resistivity exhibits values of 23.6 and 27.6 μΩ cm.