ZrO2 Thin Films Grown on Silicon Substrates by Atomic Layer Deposition with Cp2Zr(CH3)2 and Water as Precursors (pages 207–212)
M. Putkonen, J. Niinistö, K. Kukli, T. Sajavaara, M. Karppinen, H. Yamauchi and L. Niinistö
Article first published online: 18 AUG 2003 | DOI: 10.1002/cvde.200306254
Zirconia thin films have been deposited onto Si(100) by ALD from Cp2Zr(CH3)2 and water in the temperature region 200–500 °C. Processing parameters optimized at 350 °C produce uniform films at a deposition rate of 0.43 Å (cycle)–1 with carbon and hydrogen impurity levels of < 0.1 at %. Films deposited at 300–400 °C are found to be crystalline with monoclinic (11) as the preferred orientation. A breakdown field of 9.5 MV/cm is reported for a 6.9 nm thick ZrO2 film and leakage current density of 10–6 A/cm2 at 1 MV/cm field. In conclusion, the system is found to be a good alternative to existing zirconium halides and alkoxide systems.