Substrate-Independent Palladium Atomic Layer Deposition (pages 258–264)
J.J. Senkevich, F. Tang, D. Rogers, J.T. Drotar, C. Jezewski, W.A. Lanford, G.-C. Wang and T.-M. Lu
Article first published online: 23 OCT 2003 | DOI: 10.1002/cvde.200306246
A novel method is presented which allows the ALD of palladium onto dielectric surfaces. This is achieved by activating the dielectric surface with sulfide terminated silanes followed by the deposition of a palladium seed layer with the sequential pulsing of PdII(hfac)2 and glyoxylic acid above 200 °C; the acid acts as a novel remover to the chemisorbed organic ligand facilitating the deposition of the palladium seed layer. This is followed by palladium ALD with sequential pulsing of PdII(hfac)2 and H2 at a low temperature of 80 °C. The method is suggested to be appropriate to all metals that sublime and can chemisorb on the substrate without decomposition.